ON Semiconductor MMBD770T1G

SKU: MMBD770T1G-9

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Manufacturer Part :
MMBD770T1G
Manufacturer :
ON Semiconductor
Package :
SC-70, SOT-323
RoHS :
ROHS3 Compliant
MMBD770T1G Datasheet :

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Description

Specification

Processor

Manufacturer

ON Semiconductor

Number of Terminations

3

Surface Mount

YES

Number of Pins

3

Diode Element Material

SILICON

Operating Temperature

-55°C~125°C TJ

Packaging

Tape & Reel (TR)

Published

2006

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Active

Base Part Number

MMBD770

Moisture Sensitivity Level (MSL)

1 (Unlimited)

ECCN Code

EAR99

Terminal Finish

Tin (Sn)

Additional Feature

LOW REVERSE LEAKAGE

HTS Code

8541.10.00.60

Voltage - Rated DC

70V

Terminal Position

DUAL

Terminal Form

GULL WING

Peak Reflow Temperature (Cel)

260

Current Rating

1A

Time@Peak Reflow Temperature-Max (s)

40

Package / Case

SC-70, SOT-323

Factory Lead Time

2 Weeks

Peak Reverse Current

200nA

Number of Elements

1

Max Current Rating

200mA

Element Configuration

Single

Diode Type

Schottky – Single

Power Dissipation

120mW

Output Current

200mA

Forward Current

200mA

Max Reverse Leakage Current

200nA

Max Surge Current

1A

Forward Voltage

1V

Max Repetitive Reverse Voltage (Vrrm)

70V

Capacitance @ Vr, F

1pF @ 20V 1MHz

Pin Count

3

Peak Non-Repetitive Surge Current

1A

Max Forward Surge Current (Ifsm)

1A

Reverse Voltage (DC)

70V

Diode Capacitance-Max

1pF

Height

850μm

Length

2.1mm

Width

1.24mm

Radiation Hardening

No

RoHS Status

ROHS3 Compliant

Polarity

Standard

Lead Free

Lead Free

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