ON Semiconductor NTA4151PT1G

SKU: NTA4151PT1G-11

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Manufacturer Part :
NTA4151PT1G
Manufacturer :
ON Semiconductor
Package :
SC-75, SOT-416
RoHS :
ROHS3 Compliant
NTA4151PT1G Datasheet :

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Description

Specification

Processor

Manufacturer

ON Semiconductor

Element Configuration

Single

Package / Case

SC-75, SOT-416

Surface Mount

YES

Number of Pins

3

Transistor Element Material

SILICON

Operating Temperature

-55°C~150°C TJ

Packaging

Tape & Reel (TR)

Published

2005

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Active

Number of Terminations

3

ECCN Code

EAR99

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Resistance

260mOhm

Terminal Finish

Tin (Sn)

Voltage - Rated DC

-20V

Terminal Position

DUAL

Terminal Form

GULL WING

Peak Reflow Temperature (Cel)

260

Current Rating

-760mA

Time@Peak Reflow Temperature-Max (s)

40

Pin Count

3

Number of Elements

1

Power Dissipation-Max

301mW Tj

Mounting Type

Surface Mount

Factory Lead Time

6 Weeks

Fall Time (Typ)

8.2 ns

Turn-Off Delay Time

29 ns

FET Type

P-Channel

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

360m Ω @ 350mA, 4.5V

Vgs(th) (Max) @ Id

450mV @ 250μA

Input Capacitance (Ciss) (Max) @ Vds

156pF @ 5V

Current - Continuous Drain (Id) @ 25°C

760mA Tj

Gate Charge (Qg) (Max) @ Vgs

2.1nC @ 4.5V

Rise Time

8.2ns

Drain to Source Voltage (Vdss)

20V

Drive Voltage (Max Rds On,Min Rds On)

1.8V 4.5V

Vgs (Max)

±6V

Power Dissipation

301mW

Operating Mode

ENHANCEMENT MODE

Continuous Drain Current (ID)

760mA

Threshold Voltage

-450mV

Gate to Source Voltage (Vgs)

6V

Drain Current-Max (Abs) (ID)

0.76A

Drain to Source Breakdown Voltage

-20V

Height

800μm

Length

1.65mm

Width

900μm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant

Turn On Delay Time

8 ns

Lead Free

Lead Free

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