Vishay Siliconix SUM110P06-07L-E3

SKU: SUM110P06-07L-E3-11

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Manufacturer Part :
SUM110P06-07L-E3
Manufacturer :
Vishay Siliconix
Package :
RoHS :
ROHS3 Compliant
SUM110P06-07L-E3 Datasheet :

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Description

Specification

Processor

Manufacturer

Vishay Siliconix

Number of Terminations

2

Mount

Surface Mount

Mounting Type

Surface Mount

Number of Pins

3

Weight

1.946308g

Transistor Element Material

SILICON

Operating Temperature

-55°C~175°C TJ

Packaging

Cut Tape (CT)

Series

TrenchFET®

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Active

Operating Mode

ENHANCEMENT MODE

Factory Lead Time

14 Weeks

ECCN Code

EAR99

Resistance

6.9MOhm

Terminal Finish

Matte Tin (Sn)

Terminal Form

GULL WING

Peak Reflow Temperature (Cel)

260

Time@Peak Reflow Temperature-Max (s)

30

Pin Count

4

JESD-30 Code

R-PSSO-G2

Number of Elements

1

Number of Channels

1

Power Dissipation-Max

3.75W Ta 375W Tc

Element Configuration

Single

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Power Dissipation

3.75W

Turn-Off Delay Time

110 ns

Continuous Drain Current (ID)

-11A

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

6.9m Ω @ 30A, 10V

Vgs(th) (Max) @ Id

3V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds

11400pF @ 25V

Current - Continuous Drain (Id) @ 25°C

110A Tc

Gate Charge (Qg) (Max) @ Vgs

345nC @ 10V

Rise Time

160ns

Drain to Source Voltage (Vdss)

60V

Drive Voltage (Max Rds On,Min Rds On)

4.5V 10V

Vgs (Max)

±20V

Fall Time (Typ)

240 ns

Turn On Delay Time

20 ns

FET Type

P-Channel

Threshold Voltage

-3V

Gate to Source Voltage (Vgs)

20V

Drain to Source Breakdown Voltage

-60V

Pulsed Drain Current-Max (IDM)

240A

Max Junction Temperature (Tj)

175°C

Nominal Vgs

-3 V

Height

5.08mm

Length

10.41mm

Width

9.65mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant

Lead Free

Lead Free

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