ON Semiconductor NVF6P02T3G

SKU: NVF6P02T3G-11

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Manufacturer Part :
NVF6P02T3G
Manufacturer :
ON Semiconductor
Package :
TO-261-4, TO-261AA
RoHS :
ROHS3 Compliant
NVF6P02T3G Datasheet :

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Description

Specification

Processor

Manufacturer

ON Semiconductor

Power Dissipation

8.3W

Package / Case

TO-261-4, TO-261AA

Surface Mount

YES

Number of Pins

4

Transistor Element Material

SILICON

Operating Temperature

-55°C~150°C TJ

Packaging

Tape & Reel (TR)

Published

2007

Series

Automotive, AEC-Q101

JESD-609 Code

e3

Part Status

Not For New Designs

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Pbfree Code

yes

Number of Terminations

4

ECCN Code

EAR99

Terminal Finish

Tin (Sn)

Terminal Position

DUAL

Terminal Form

GULL WING

Pin Count

4

Number of Elements

1

Power Dissipation-Max

8.3W Ta

Element Configuration

Single

Operating Mode

ENHANCEMENT MODE

Mounting Type

Surface Mount

Factory Lead Time

11 Weeks

Fall Time (Typ)

60 ns

Turn-Off Delay Time

60 ns

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

50m Ω @ 6A, 4.5V

Vgs(th) (Max) @ Id

1V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds

1200pF @ 16V

Current - Continuous Drain (Id) @ 25°C

10A Ta

Gate Charge (Qg) (Max) @ Vgs

20nC @ 4.5V

Rise Time

30ns

Drain to Source Voltage (Vdss)

20V

Drive Voltage (Max Rds On,Min Rds On)

2.5V 4.5V

Vgs (Max)

±8V

Turn On Delay Time

8 ns

Case Connection

DRAIN

Continuous Drain Current (ID)

10A

Gate to Source Voltage (Vgs)

8V

Drain-source On Resistance-Max

0.05Ohm

Drain to Source Breakdown Voltage

-25V

Pulsed Drain Current-Max (IDM)

35A

Height

1.65mm

Length

6.7mm

Width

3.7mm

Radiation Hardening

No

RoHS Status

ROHS3 Compliant

FET Type

P-Channel

Lead Free

Lead Free

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