Infineon Technologies IRF6665TRPBF

SKU: IRF6665TRPBF-11

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Manufacturer Part :
IRF6665TRPBF
Manufacturer :
Infineon Technologies
Package :
DirectFET™ Isometric SH
RoHS :
ROHS3 Compliant
IRF6665TRPBF Datasheet :

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Description

Specification

Processor

Manufacturer

Infineon Technologies

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Mount

Surface Mount

Mounting Type

Surface Mount

Package / Case

DirectFET™ Isometric SH

Number of Pins

3

Transistor Element Material

SILICON

Operating Temperature

-40°C~150°C TJ

Packaging

Tape & Reel (TR)

Published

2006

Series

HEXFET®

JESD-609 Code

e1

Power Dissipation

42W

Part Status

Active

Number of Terminations

2

ECCN Code

EAR99

Additional Feature

HIGH RELIABILITY

Voltage - Rated DC

100V

Terminal Position

BOTTOM

Current Rating

4.2A

JESD-30 Code

R-XBCC-N2

Number of Elements

1

Power Dissipation-Max

2.2W Ta 42W Tc

Element Configuration

Single

Operating Mode

ENHANCEMENT MODE

Contact Plating

Tin

Factory Lead Time

12 Weeks

Turn-Off Delay Time

14 ns

Turn On Delay Time

7.4 ns

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

62m Ω @ 5A, 10V

Vgs(th) (Max) @ Id

5V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds

530pF @ 25V

Current - Continuous Drain (Id) @ 25°C

4.2A Ta 19A Tc

Gate Charge (Qg) (Max) @ Vgs

13nC @ 10V

Rise Time

2.8ns

Drive Voltage (Max Rds On,Min Rds On)

10V

Vgs (Max)

±20V

Fall Time (Typ)

4.3 ns

Continuous Drain Current (ID)

3.4A

Threshold Voltage

5V

Case Connection

DRAIN

Gate to Source Voltage (Vgs)

20V

Drain-source On Resistance-Max

0.062Ohm

Drain to Source Breakdown Voltage

100V

Nominal Vgs

5 V

Height

506μm

Length

4.826mm

Width

3.95mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant

FET Type

N-Channel

Lead Free

Lead Free

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