IXYS FII30-12E

SKU: FII30-12E-9

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Manufacturer Part :
FII30-12E
Manufacturer :
IXYS
Package :
i4-Pac™-5
RoHS :
RoHS Compliant
FII30-12E Datasheet :
FII30-12E

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Description

Specification

Processor

Manufacturer

IXYS

Configuration

Half Bridge

Package / Case

i4-Pac™-5

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

1.2kV

Operating Temperature

-55°C~150°C TJ

Published

2005

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

JESD-609 Code

e1

Number of Terminations

5

Terminal Finish

Tin/Silver/Copper (Sn/Ag/Cu)

Max Power Dissipation

150W

Terminal Position

SINGLE

Pin Count

5

JESD-30 Code

R-PSIP-T5

Mounting Type

Through Hole

Mount

Through Hole

Voltage - Collector Emitter Breakdown (Max)

1200V

Input Capacitance

1.2nF

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Input

Standard

Collector Emitter Voltage (VCEO)

2.9V

Max Collector Current

33A

Current - Collector Cutoff (Max)

200μA

Case Connection

ISOLATED

Element Configuration

Dual

Turn On Time

310 ns

Vce(on) (Max) @ Vge, Ic

2.9V @ 15V, 20A

Turn Off Time-Nom (toff)

495 ns

IGBT Type

NPT

NTC Thermistor

No

Input Capacitance (Cies) @ Vce

1.2nF @ 25V

Power - Max

150W

RoHS Status

RoHS Compliant

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