Vishay Semiconductor Diodes Division VS-GB100TP120N

SKU: VS-GB100TP120N-9

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Manufacturer Part :
VS-GB100TP120N
Manufacturer :
Vishay Semiconductor Diodes Division
Package :
INT-A-Pak
RoHS :
ROHS3 Compliant
VS-GB100TP120N Datasheet :
VS-GB100TP120N

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Description

Specification

Processor

Manufacturer

Vishay Semiconductor Diodes Division

Max Power Dissipation

650W

Mount

Chassis Mount

Mounting Type

Chassis Mount

Package / Case

INT-A-Pak

Collector-Emitter Breakdown Voltage

1.2kV

Operating Temperature

150°C TJ

Published

2015

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

ECCN Code

EAR99

Factory Lead Time

12 Weeks

Power - Max

650W

Configuration

Half Bridge

Input

Standard

Collector Emitter Voltage (VCEO)

2.2V

Max Collector Current

200A

Current - Collector Cutoff (Max)

5mA

Voltage - Collector Emitter Breakdown (Max)

1200V

Input Capacitance

7.43nF

Vce(on) (Max) @ Vge, Ic

2.2V @ 15V, 100A

NTC Thermistor

No

Input Capacitance (Cies) @ Vce

7.43nF @ 25V

RoHS Status

ROHS3 Compliant

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