Microsemi Corporation APTGT100BB60T3G

SKU: APTGT100BB60T3G-9

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Manufacturer Part :
APTGT100BB60T3G
Manufacturer :
Microsemi Corporation
Package :
SP3
RoHS :
RoHS Compliant
APTGT100BB60T3G Datasheet :

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Description

Specification

Processor

Manufacturer

Microsemi Corporation

Configuration

Half Bridge

Mount

Screw, Through Hole

Mounting Type

Through Hole

Package / Case

SP3

Number of Pins

16

Collector-Emitter Breakdown Voltage

600V

Operating Temperature

-40°C~175°C TJ

Published

2012

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

ECCN Code

EAR99

Max Power Dissipation

340W

Factory Lead Time

36 Weeks

Power - Max

340W

Element Configuration

Dual

Input

Standard

Collector Emitter Voltage (VCEO)

600V

Max Collector Current

150A

Current - Collector Cutoff (Max)

250μA

Input Capacitance

6.1nF

Vce(on) (Max) @ Vge, Ic

1.9V @ 15V, 100A

IGBT Type

Trench Field Stop

NTC Thermistor

Yes

Gate-Emitter Voltage-Max

20V

Input Capacitance (Cies) @ Vce

6.1nF @ 25V

VCEsat-Max

1.9 V

RoHS Status

RoHS Compliant

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