Microsemi Corporation APTGT75DA120TG

SKU: APTGT75DA120TG-9

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Manufacturer Part :
APTGT75DA120TG
Manufacturer :
Microsemi Corporation
Package :
SP4
RoHS :
RoHS Compliant
APTGT75DA120TG Datasheet :

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Description

Specification

Processor

Manufacturer

Microsemi Corporation

JESD-609 Code

e1

Mount

Chassis Mount, Screw

Mounting Type

Chassis Mount

Package / Case

SP4

Number of Pins

20

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

1.2kV

Number of Elements

1

Operating Temperature

-40°C~150°C TJ

Terminal Form

UNSPECIFIED

Factory Lead Time

36 Weeks

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

12

ECCN Code

EAR99

Terminal Finish

TIN SILVER COPPER

Additional Feature

AVALANCHE RATED

Max Power Dissipation

357W

Terminal Position

UPPER

Published

2006

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Collector Emitter Voltage (VCEO)

1.2kV

Max Collector Current

110A

JESD-30 Code

R-XUFM-X12

Qualification Status

Not Qualified

Configuration

Single

Case Connection

ISOLATED

Power - Max

357W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Input

Standard

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Pin Count

12

Current - Collector Cutoff (Max)

250μA

Voltage - Collector Emitter Breakdown (Max)

1200V

Input Capacitance

5.34nF

Turn On Time

335 ns

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 75A

Turn Off Time-Nom (toff)

610 ns

IGBT Type

Trench Field Stop

NTC Thermistor

Yes

Input Capacitance (Cies) @ Vce

5.34nF @ 25V

RoHS Status

RoHS Compliant

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