Microsemi Corporation APTGV100H60T3G

SKU: APTGV100H60T3G-9

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Manufacturer Part :
APTGV100H60T3G
Manufacturer :
Microsemi Corporation
Package :
SP3
RoHS :
RoHS Compliant
APTGV100H60T3G Datasheet :
APTGV100H60T3G

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Description

Specification

Processor

Manufacturer

Microsemi Corporation

Pbfree Code

yes

Mounting Type

Chassis Mount

Package / Case

SP3

Number of Pins

3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Operating Temperature (Max.)

150°C

Published

2007

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Mount

Chassis Mount, Screw

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

25

ECCN Code

EAR99

Terminal Finish

TIN SILVER COPPER

Max Power Dissipation

340W

Terminal Position

UPPER

Terminal Form

UNSPECIFIED

JESD-609 Code

e1

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Max Collector Current

150A

Current - Collector Cutoff (Max)

250μA

Qualification Status

Not Qualified

Configuration

Full Bridge Inverter

Case Connection

ISOLATED

Power - Max

340W

Polarity/Channel Type

N-CHANNEL

Input

Standard

Collector Emitter Voltage (VCEO)

1.9V

Pin Count

25

JESD-30 Code

R-XUFM-X25

Input Capacitance

6.1nF

Turn On Time

180 ns

Vce(on) (Max) @ Vge, Ic

1.9V @ 15V, 100A

Turn Off Time-Nom (toff)

370 ns

IGBT Type

NPT, Trench Field Stop

NTC Thermistor

Yes

Gate-Emitter Voltage-Max

20V

Input Capacitance (Cies) @ Vce

6.1nF @ 25V

RoHS Status

RoHS Compliant

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