Microsemi Corporation APTGT75DH60T1G

SKU: APTGT75DH60T1G-9

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Manufacturer Part :
APTGT75DH60T1G
Manufacturer :
Microsemi Corporation
Package :
SP1
RoHS :
RoHS Compliant
APTGT75DH60T1G Datasheet :
APTGT75DH60T1G

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Description

Specification

Processor

Manufacturer

Microsemi Corporation

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Package / Case

SP1

Number of Pins

12

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

2

Operating Temperature

-40°C~175°C TJ

Published

2013

JESD-30 Code

R-XUFM-X9

Part Status

Obsolete

Number of Terminations

9

ECCN Code

EAR99

Max Power Dissipation

250W

Terminal Position

UPPER

Terminal Form

UNSPECIFIED

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Pin Count

12

Mounting Type

Chassis Mount

Factory Lead Time

22 Weeks

Current - Collector Cutoff (Max)

250μA

Configuration

Asymmetrical Bridge

Case Connection

ISOLATED

Power - Max

250W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Input

Standard

Collector Emitter Voltage (VCEO)

600V

Max Collector Current

100A

Input Capacitance

4.62nF

Turn On Time

170 ns

Qualification Status

Not Qualified

Vce(on) (Max) @ Vge, Ic

1.9V @ 15V, 75A

Turn Off Time-Nom (toff)

310 ns

IGBT Type

Trench Field Stop

NTC Thermistor

Yes

Gate-Emitter Voltage-Max

20V

Input Capacitance (Cies) @ Vce

4.62nF @ 25V

VCEsat-Max

1.9 V

Element Configuration

Dual

RoHS Status

RoHS Compliant

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