Microsemi Corporation APTGT30H60T1G

SKU: APTGT30H60T1G-9

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Manufacturer Part :
APTGT30H60T1G
Manufacturer :
Microsemi Corporation
Package :
SP1
RoHS :
RoHS Compliant
APTGT30H60T1G Datasheet :

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Description

Specification

Processor

Manufacturer

Microsemi Corporation

JESD-609 Code

e1

Mounting Type

Chassis Mount

Package / Case

SP1

Number of Pins

12

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

4

Operating Temperature

-40°C~175°C TJ

Terminal Form

THROUGH-HOLE

Published

2012

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

12

ECCN Code

EAR99

Terminal Finish

TIN SILVER COPPER

Max Power Dissipation

90W

Terminal Position

UPPER

Mount

Chassis Mount, Screw

Factory Lead Time

36 Weeks

Input Capacitance

1.6nF

Configuration

Full Bridge Inverter

Power - Max

90W

Transistor Application

MOTOR CONTROL

Polarity/Channel Type

N-CHANNEL

Input

Standard

Collector Emitter Voltage (VCEO)

600V

Max Collector Current

50A

Current - Collector Cutoff (Max)

250μA

Turn On Time

170 ns

Vce(on) (Max) @ Vge, Ic

1.9V @ 15V, 30A

Pin Count

12

Turn Off Time-Nom (toff)

310 ns

IGBT Type

Trench Field Stop

NTC Thermistor

Yes

Gate-Emitter Voltage-Max

20V

Input Capacitance (Cies) @ Vce

1.6nF @ 25V

VCEsat-Max

1.9 V

Radiation Hardening

No

Case Connection

ISOLATED

RoHS Status

RoHS Compliant

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