Microsemi Corporation APTGT50DU170TG

SKU: APTGT50DU170TG-9

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Manufacturer Part :
APTGT50DU170TG
Manufacturer :
Microsemi Corporation
Package :
SP4
RoHS :
RoHS Compliant
APTGT50DU170TG Datasheet :

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Description

Specification

Processor

Manufacturer

Microsemi Corporation

Part Status

Obsolete

Mounting Type

Chassis Mount

Package / Case

SP4

Number of Pins

4

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

1.7kV

Number of Elements

2

Operating Temperature

-40°C~150°C TJ

Published

2006

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Mount

Chassis Mount

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

12

Terminal Finish

TIN SILVER COPPER

Additional Feature

AVALANCHE RATED

Max Power Dissipation

312W

Terminal Position

UPPER

Terminal Form

UNSPECIFIED

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Reach Compliance Code

unknown

JESD-609 Code

e1

Pin Count

12

Max Collector Current

75A

Current - Collector Cutoff (Max)

250μA

Configuration

Dual, Common Source

Element Configuration

Dual

Case Connection

ISOLATED

Power - Max

312W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Input

Standard

Collector Emitter Voltage (VCEO)

2.4V

JESD-30 Code

R-XUFM-X12

Qualification Status

Not Qualified

Voltage - Collector Emitter Breakdown (Max)

1700V

Input Capacitance

4.4nF

Turn On Time

450 ns

Vce(on) (Max) @ Vge, Ic

2.4V @ 15V, 50A

Turn Off Time-Nom (toff)

1100 ns

IGBT Type

Trench Field Stop

NTC Thermistor

Yes

Gate-Emitter Voltage-Max

20V

Input Capacitance (Cies) @ Vce

4.4nF @ 25V

RoHS Status

RoHS Compliant

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