Microsemi Corporation APTGT75DH120TG

SKU: APTGT75DH120TG-9

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Manufacturer Part :
APTGT75DH120TG
Manufacturer :
Microsemi Corporation
Package :
SP4
RoHS :
RoHS Compliant
APTGT75DH120TG Datasheet :

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Description

Specification

Processor

Manufacturer

Microsemi Corporation

Pbfree Code

yes

Mounting Type

Chassis Mount

Package / Case

SP4

Number of Pins

20

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

1.2kV

Number of Elements

2

Operating Temperature

-40°C~150°C TJ

Published

2006

Peak Reflow Temperature (Cel)

NOT SPECIFIED

JESD-609 Code

e1

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

14

ECCN Code

EAR99

Terminal Finish

TIN SILVER COPPER

Additional Feature

AVALANCHE RATED

Max Power Dissipation

357W

Terminal Position

UPPER

Terminal Form

UNSPECIFIED

Mount

Chassis Mount, Screw

Factory Lead Time

22 Weeks

Collector Emitter Voltage (VCEO)

1.2kV

Pin Count

14

Qualification Status

Not Qualified

Configuration

Asymmetrical Bridge

Element Configuration

Dual

Case Connection

ISOLATED

Power - Max

357W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Input

Standard

Max Collector Current

110A

Current - Collector Cutoff (Max)

250μA

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Voltage - Collector Emitter Breakdown (Max)

1200V

Input Capacitance

5.34nF

Turn On Time

335 ns

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 75A

Turn Off Time-Nom (toff)

610 ns

IGBT Type

Trench Field Stop

NTC Thermistor

Yes

Input Capacitance (Cies) @ Vce

5.34nF @ 25V

JESD-30 Code

R-XUFM-X14

RoHS Status

RoHS Compliant

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