Microsemi Corporation APTGT25A120T1G

SKU: APTGT25A120T1G-9

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Manufacturer Part :
APTGT25A120T1G
Manufacturer :
Microsemi Corporation
Package :
SP1
RoHS :
RoHS Compliant
APTGT25A120T1G Datasheet :

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Description

Specification

Processor

Manufacturer

Microsemi Corporation

Part Status

Obsolete

Mounting Type

Chassis Mount

Package / Case

SP1

Number of Pins

1

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

1.2kV

Number of Elements

2

Operating Temperature

-40°C~150°C TJ

Published

2007

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Mount

Chassis Mount

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

12

Terminal Finish

Tin/Silver/Copper (Sn/Ag/Cu)

Max Power Dissipation

156W

Terminal Position

UPPER

Terminal Form

THROUGH-HOLE

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Reach Compliance Code

unknown

JESD-609 Code

e1

Pin Count

12

Current - Collector Cutoff (Max)

250μA

Voltage - Collector Emitter Breakdown (Max)

1200V

Element Configuration

Dual

Case Connection

ISOLATED

Power - Max

156W

Transistor Application

MOTOR CONTROL

Polarity/Channel Type

N-CHANNEL

Input

Standard

Collector Emitter Voltage (VCEO)

2.1V

Max Collector Current

40A

Qualification Status

Not Qualified

Configuration

Half Bridge

Input Capacitance

1.8nF

Turn On Time

140 ns

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 25A

Turn Off Time-Nom (toff)

610 ns

IGBT Type

Trench Field Stop

NTC Thermistor

Yes

Gate-Emitter Voltage-Max

20V

Input Capacitance (Cies) @ Vce

1.8nF @ 25V

RoHS Status

RoHS Compliant

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