Infineon Technologies IRGIB6B60KDPBF

SKU: IRGIB6B60KDPBF-9

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Manufacturer Part :
IRGIB6B60KDPBF
Manufacturer :
Infineon Technologies
Package :
TO-220-3 Full Pack
RoHS :
ROHS3 Compliant
IRGIB6B60KDPBF Datasheet :

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Description

Specification

Processor

Manufacturer

Infineon Technologies

Published

2004

Mounting Type

Through Hole

Package / Case

TO-220-3 Full Pack

Number of Pins

3

Weight

2.299997g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

400V, 5A, 100 Ω, 15V

Operating Temperature

-55°C~175°C TJ

Input Type

Standard

Packaging

Tube

Part Status

Last Time Buy

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Voltage - Rated DC

600V

Max Power Dissipation

38W

Current Rating

13A

Element Configuration

Single

Power Dissipation

38W

Case Connection

ISOLATED

Mount

Through Hole

Factory Lead Time

16 Weeks

Current - Collector Pulsed (Icm)

22A

Rise Time

17ns

Collector Emitter Voltage (VCEO)

2.2V

Max Collector Current

11A

Reverse Recovery Time

70 ns

JEDEC-95 Code

TO-220AB

Turn On Time

45 ns

Vce(on) (Max) @ Vge, Ic

2.2V @ 15V, 5A

Turn Off Time-Nom (toff)

258 ns

IGBT Type

NPT

Gate Charge

18.2nC

Td (on/off) @ 25°C

25ns/215ns

Switching Energy

110μJ (on), 135μJ (off)

Transistor Application

MOTOR CONTROL

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

5.5V

Fall Time-Max (tf)

27ns

Height

16.002mm

Length

10.5918mm

Width

4.8006mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant

Polarity/Channel Type

N-CHANNEL

Lead Free

Lead Free

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