STMicroelectronics STGW30V60DF

SKU: STGW30V60DF-9

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Manufacturer Part :
STGW30V60DF
Manufacturer :
STMicroelectronics
Package :
TO-247-3
RoHS :
ROHS3 Compliant
STGW30V60DF Datasheet :

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Description

Specification

Processor

Manufacturer

STMicroelectronics

Operating Temperature

-55°C~175°C TJ

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Element Configuration

Single

Factory Lead Time

20 Weeks

Packaging

Tube

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Max Power Dissipation

258W

Base Part Number

STGW30

Test Conditions

400V, 30A, 10 Ω, 15V

Power Dissipation

258W

IGBT Type

Trench Field Stop

Gate Charge

163nC

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

600V

Max Collector Current

60A

Reverse Recovery Time

53 ns

Turn On Time

59 ns

Vce(on) (Max) @ Vge, Ic

2.3V @ 15V, 30A

Turn Off Time-Nom (toff)

225 ns

Input Type

Standard

Transistor Application

POWER CONTROL

Current - Collector Pulsed (Icm)

120A

Td (on/off) @ 25°C

45ns/189ns

Switching Energy

383μJ (on), 233μJ (off)

Height

20.15mm

Length

15.75mm

Width

5.15mm

Radiation Hardening

No

RoHS Status

ROHS3 Compliant

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