ON Semiconductor HGTP7N60A4

SKU: HGTP7N60A4-9

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Manufacturer Part :
HGTP7N60A4
Manufacturer :
ON Semiconductor
Package :
TO-220-3
RoHS :
ROHS3 Compliant
HGTP7N60A4 Datasheet :

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Description

Specification

Processor

Manufacturer

ON Semiconductor

Packaging

Tube

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-220-3

Number of Pins

3

Weight

1.8g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

390V, 7A, 25 Ω, 15V

Turn Off Delay Time

100 ns

Max Power Dissipation

125W

Factory Lead Time

44 Weeks

Published

2003

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Not For New Designs

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Terminal Finish

Tin (Sn)

Additional Feature

LOW CONDUCTION LOSS

HTS Code

8541.29.00.95

Voltage - Rated DC

600V

Operating Temperature

-55°C~150°C TJ

Current Rating

34A

Turn On Time

17 ns

Vce(on) (Max) @ Vge, Ic

2.7V @ 15V, 7A

Power Dissipation

125W

Case Connection

COLLECTOR

Input Type

Standard

Turn On Delay Time

11 ns

Transistor Application

POWER CONTROL

Rise Time

11ns

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

600V

Max Collector Current

34A

JEDEC-95 Code

TO-220AB

Base Part Number

HGTP7N60

Element Configuration

Single

Turn Off Time-Nom (toff)

205 ns

Gate Charge

37nC

Current - Collector Pulsed (Icm)

56A

Td (on/off) @ 25°C

11ns/100ns

Switching Energy

55μJ (on), 60μJ (off)

Height

9.02mm

Length

10.28mm

Width

4.57mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant

Lead Free

Lead Free

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