Infineon Technologies IRG4BC10UDPBF

SKU: IRG4BC10UDPBF-9

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Manufacturer Part :
IRG4BC10UDPBF
Manufacturer :
Infineon Technologies
Package :
TO-220-3
RoHS :
RoHS Compliant
IRG4BC10UDPBF Datasheet :

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Description

Specification

Processor

Manufacturer

Infineon Technologies

Packaging

Tube

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-220-3

Number of Pins

3

Weight

6.000006g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

480V, 5A, 100 Ω, 15V

Turn Off Delay Time

87 ns

Case Connection

COLLECTOR

Factory Lead Time

16 Weeks

Published

2000

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Voltage - Rated DC

600V

Max Power Dissipation

38W

Current Rating

8.5A

Element Configuration

Single

Power Dissipation

38W

Operating Temperature

-55°C~150°C TJ

Input Type

Standard

Current - Collector Pulsed (Icm)

34A

Td (on/off) @ 25°C

40ns/87ns

Rise Time

16ns

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

2.6V

Max Collector Current

8.5A

Reverse Recovery Time

28 ns

JEDEC-95 Code

TO-220AB

Turn On Time

56 ns

Vce(on) (Max) @ Vge, Ic

2.6V @ 15V, 5A

Turn Off Time-Nom (toff)

345 ns

Gate Charge

15nC

Turn On Delay Time

40 ns

Transistor Application

POWER CONTROL

Switching Energy

140μJ (on), 120μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

6V

Fall Time-Max (tf)

210ns

Height

15.24mm

Length

10.5156mm

Width

4.69mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

RoHS Compliant

Lead Free

Lead Free

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