Infineon Technologies IRG4BC30KPBF

SKU: IRG4BC30KPBF-9

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Manufacturer Part :
IRG4BC30KPBF
Manufacturer :
Infineon Technologies
Package :
TO-220-3
RoHS :
RoHS Compliant
IRG4BC30KPBF Datasheet :
IRG4BC30KPBF

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Description

Specification

Processor

Manufacturer

Infineon Technologies

Published

2000

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-220-3

Number of Pins

3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

480V, 16A, 23 Ω, 15V

Operating Temperature

-55°C~150°C TJ

Power Dissipation

100W

Factory Lead Time

16 Weeks

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Additional Feature

LOW CONDUCTION LOSS

Voltage - Rated DC

600V

Max Power Dissipation

100W

Terminal Position

SINGLE

Current Rating

28A

Element Configuration

Dual

Packaging

Tube

Case Connection

COLLECTOR

Current - Collector Pulsed (Icm)

58A

Td (on/off) @ 25°C

26ns/130ns

Rise Time

28ns

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

2.7V

Max Collector Current

28A

JEDEC-95 Code

TO-220AB

Turn On Time

54 ns

Vce(on) (Max) @ Vge, Ic

2.7V @ 15V, 16A

Turn Off Time-Nom (toff)

380 ns

Gate Charge

67nC

Input Type

Standard

Transistor Application

MOTOR CONTROL

Switching Energy

360μJ (on), 510μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

6V

Fall Time-Max (tf)

170ns

Height

15.24mm

Length

10.5156mm

Width

14.6812mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

RoHS Compliant

Lead Free

Lead Free

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