ON Semiconductor HGTG20N60B3

SKU: HGTG20N60B3-9

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Manufacturer Part :
HGTG20N60B3
Manufacturer :
ON Semiconductor
Package :
TO-247-3
RoHS :
ROHS3 Compliant
HGTG20N60B3 Datasheet :

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Description

Specification

Processor

Manufacturer

ON Semiconductor

Operating Temperature

-40°C~150°C TJ

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Weight

6.39g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

480V, 20A, 10 Ω, 15V

Additional Feature

LOW CONDUCTION LOSS

Factory Lead Time

44 Weeks

Packaging

Tube

Published

2004

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Not For New Designs

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Terminal Finish

Tin (Sn)

Turn Off Delay Time

220 ns

HTS Code

8541.29.00.95

Collector Emitter Voltage (VCEO)

600V

Max Collector Current

40A

Current Rating

40A

Base Part Number

HGTG20N60

Polarity

NPN

Element Configuration

Single

Power Dissipation

165W

Case Connection

COLLECTOR

Input Type

Standard

Turn On Delay Time

25 ns

Transistor Application

POWER CONTROL

Voltage - Rated DC

600V

Max Power Dissipation

165W

Turn On Time

45 ns

Vce(on) (Max) @ Vge, Ic

2V @ 15V, 20A

Turn Off Time-Nom (toff)

360 ns

Gate Charge

80nC

Current - Collector Pulsed (Icm)

160A

Switching Energy

475μJ (on), 1.05mJ (off)

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant

Lead Free

Lead Free

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