Infineon Technologies IRG7PH35UD1PBF

SKU: IRG7PH35UD1PBF-9

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Manufacturer Part :
IRG7PH35UD1PBF
Manufacturer :
Infineon Technologies
Package :
TO-247-3
RoHS :
RoHS Compliant
IRG7PH35UD1PBF Datasheet :

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Description

Specification

Processor

Manufacturer

Infineon Technologies

Qualification Status

Not Qualified

Surface Mount

NO

Transistor Element Material

SILICON

Current-Collector (Ic) (Max)

50A

Number of Elements

1

Test Conditions

600V, 20A, 10 Ω, 15V

Operating Temperature

-55°C~150°C TJ

Published

2010

Part Status

Obsolete

Packaging

Tube

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Terminal Position

SINGLE

Reach Compliance Code

compliant

Base Part Number

IRG7PH35

JESD-30 Code

R-PSFM-T3

Package / Case

TO-247-3

Mounting Type

Through Hole

Turn Off Time-Nom (toff)

400 ns

IGBT Type

Trench

Power - Max

179W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

JEDEC-95 Code

TO-247AC

Voltage - Collector Emitter Breakdown (Max)

1200V

Power Dissipation-Max (Abs)

179W

Vce(on) (Max) @ Vge, Ic

2.2V @ 15V, 20A

Case Connection

COLLECTOR

Configuration

SINGLE WITH BUILT-IN DIODE

Gate Charge

85nC

Current - Collector Pulsed (Icm)

150A

Td (on/off) @ 25°C

-/160ns

Switching Energy

620μJ (off)

Gate-Emitter Voltage-Max

30V

Gate-Emitter Thr Voltage-Max

6V

Fall Time-Max (tf)

105ns

Input Type

Standard

RoHS Status

RoHS Compliant

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