Infineon Technologies IHW30N110R3FKSA1

SKU: IHW30N110R3FKSA1-9

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Manufacturer Part :
IHW30N110R3FKSA1
Manufacturer :
Infineon Technologies
Package :
TO-247-3
RoHS :
ROHS3 Compliant
IHW30N110R3FKSA1 Datasheet :

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Description

Specification

Processor

Manufacturer

Infineon Technologies

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

1.1kV

Number of Elements

1

Test Conditions

600V, 30A, 15 Ω, 15V

Packaging

Tube

Published

2015

Operating Temperature

-40°C~175°C TJ

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Terminal Finish

Tin (Sn)

Max Power Dissipation

333W

Mount

Through Hole

Factory Lead Time

26 Weeks

Vce(on) (Max) @ Vge, Ic

1.75V @ 15V, 30A

Turn Off Time-Nom (toff)

470 ns

Element Configuration

Single

Input Type

Standard

Power - Max

333W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

1.1kV

Max Collector Current

60A

Voltage - Collector Emitter Breakdown (Max)

1100V

Pin Count

3

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

IGBT Type

Trench

Gate Charge

180nC

Current - Collector Pulsed (Icm)

90A

Td (on/off) @ 25°C

-/350ns

Switching Energy

1.15mJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

6.4V

RoHS Status

ROHS3 Compliant

Qualification Status

Not Qualified

Lead Free

Lead Free

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