ON Semiconductor NGTB30N120FL2WG

SKU: NGTB30N120FL2WG-9

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Manufacturer Part :
NGTB30N120FL2WG
Manufacturer :
ON Semiconductor
Package :
TO-247-3
RoHS :
ROHS3 Compliant
NGTB30N120FL2WG Datasheet :

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Description

Specification

Processor

Manufacturer

ON Semiconductor

Packaging

Tube

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Weight

6.500007g

Collector-Emitter Breakdown Voltage

1.2kV

Test Conditions

600V, 30A, 10 Ω, 15V

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Factory Lead Time

11 Weeks

Published

2006

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

ECCN Code

EAR99

Terminal Finish

Tin (Sn)

Max Power Dissipation

452W

Operating Temperature

-55°C~175°C TJ

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

IGBT Type

Trench Field Stop

Gate Charge

220nC

Input Type

Standard

Power - Max

452W

Collector Emitter Voltage (VCEO)

1.2kV

Max Collector Current

60A

Reverse Recovery Time

240 ns

Voltage - Collector Emitter Breakdown (Max)

1200V

Vce(on) (Max) @ Vge, Ic

2.3V @ 15V, 30A

Pin Count

3

Element Configuration

Single

Current - Collector Pulsed (Icm)

120A

Td (on/off) @ 25°C

98ns/210ns

Switching Energy

2.6mJ (on), 700μJ (off)

Height

21.4mm

Length

16.25mm

Width

5.3mm

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant

Lead Free

Lead Free

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