STMicroelectronics STGW35HF60WDI

SKU: STGW35HF60WDI-9

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Manufacturer Part :
STGW35HF60WDI
Manufacturer :
STMicroelectronics
Package :
TO-247-3
RoHS :
ROHS3 Compliant
STGW35HF60WDI Datasheet :

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Description

Specification

Processor

Manufacturer

STMicroelectronics

Packaging

Tube

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-247-3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

390V, 20A, 10 Ω, 15V

Turn Off Delay Time

175 ns

Pin Count

3

Factory Lead Time

8 Weeks

JESD-609 Code

e3

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Terminal Finish

Tin (Sn)

Max Power Dissipation

200W

Base Part Number

STGW35

Operating Temperature

-55°C~150°C TJ

JESD-30 Code

R-PSFM-T3

Vce(on) (Max) @ Vge, Ic

2.5V @ 15V, 20A

Turn Off Time-Nom (toff)

295 ns

Turn On Delay Time

35 ns

Power - Max

200W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

600V

Max Collector Current

60A

Reverse Recovery Time

85 ns

Turn On Time

45 ns

Element Configuration

Single

Input Type

Standard

Gate Charge

140nC

Current - Collector Pulsed (Icm)

150A

Td (on/off) @ 25°C

30ns/175ns

Switching Energy

185μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

5.75V

Radiation Hardening

No

RoHS Status

ROHS3 Compliant

Lead Free

Lead Free

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