Infineon Technologies IGW50N65H5AXKSA1

SKU: IGW50N65H5AXKSA1-9

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Manufacturer Part :
IGW50N65H5AXKSA1
Manufacturer :
Infineon Technologies
Package :
TO-247-3
RoHS :
ROHS3 Compliant
IGW50N65H5AXKSA1 Datasheet :

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Description

Specification

Processor

Manufacturer

Infineon Technologies

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

650V

Number of Elements

1

Operating Temperature

-40°C~175°C TJ

Packaging

Tube

Test Conditions

400V, 25A, 12 Ω, 15V

Published

2015

Pbfree Code

yes

Part Status

Not For New Designs

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Max Power Dissipation

270W

Mount

Through Hole

Factory Lead Time

14 Weeks

Turn On Time

33 ns

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 50A

Input Type

Standard

Power - Max

270W

Transistor Application

POWER CONTROL

Halogen Free

Halogen Free

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

650V

Max Collector Current

80A

Element Configuration

Single

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Turn Off Time-Nom (toff)

213 ns

IGBT Type

Trench

Gate Charge

116nC

Current - Collector Pulsed (Icm)

150A

Td (on/off) @ 25°C

21ns/173ns

Switching Energy

450μJ (on), 160μJ (off)

RoHS Status

ROHS3 Compliant

Case Connection

COLLECTOR

Lead Free

Lead Free

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