IXYS IXGH30N120C3H1

SKU: IXGH30N120C3H1-9

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Manufacturer Part :
IXGH30N120C3H1
Manufacturer :
IXYS
Package :
TO-247-3
RoHS :
ROHS3 Compliant
IXGH30N120C3H1 Datasheet :

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Description

Specification

Processor

Manufacturer

IXYS

Pin Count

3

Mounting Type

Through Hole

Package / Case

TO-247-3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

1.2kV

Number of Elements

1

Test Conditions

600V, 24A, 5 Ω, 15V

Operating Temperature

-55°C~150°C TJ

Packaging

Tube

Series

GenX3™

Pbfree Code

yes

Published

2007

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Additional Feature

LOW CONDUCTION LOSS

Max Power Dissipation

250W

Terminal Position

SINGLE

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Base Part Number

IXG*30N120

Mount

Through Hole

Factory Lead Time

8 Weeks

Voltage - Collector Emitter Breakdown (Max)

1200V

Turn On Time

60 ns

Case Connection

COLLECTOR

Input Type

Standard

Power - Max

250W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

4.2V

Max Collector Current

48A

Reverse Recovery Time

70 ns

JEDEC-95 Code

TO-247AD

Qualification Status

Not Qualified

JESD-30 Code

R-PSFM-T3

Vce(on) (Max) @ Vge, Ic

4.2V @ 15V, 24A

Turn Off Time-Nom (toff)

415 ns

IGBT Type

PT

Gate Charge

80nC

Current - Collector Pulsed (Icm)

115A

Td (on/off) @ 25°C

18ns/106ns

Switching Energy

1.45mJ (on), 470μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

5V

Configuration

SINGLE WITH BUILT-IN DIODE

RoHS Status

ROHS3 Compliant

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