STMicroelectronics STGWA40S120DF3

SKU: STGWA40S120DF3-9

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Manufacturer Part :
STGWA40S120DF3
Manufacturer :
STMicroelectronics
Package :
TO-247-3
RoHS :
ROHS3 Compliant
STGWA40S120DF3 Datasheet :

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Description

Specification

Processor

Manufacturer

STMicroelectronics

Packaging

Tube

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-247-3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

1.2kV

Number of Elements

1

Test Conditions

600V, 40A, 15 Ω, 15V

Base Part Number

STGWA40

Factory Lead Time

32 Weeks

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Max Power Dissipation

468W

Terminal Position

SINGLE

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Operating Temperature

-55°C~175°C TJ

JESD-30 Code

R-PSFM-T3

Voltage - Collector Emitter Breakdown (Max)

1200V

Turn On Time

50 ns

Input Type

Standard

Power - Max

468W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

2.15V

Max Collector Current

80A

Reverse Recovery Time

355 ns

Configuration

SINGLE WITH BUILT-IN DIODE

Case Connection

COLLECTOR

Vce(on) (Max) @ Vge, Ic

2.15V @ 15V, 40A

Turn Off Time-Nom (toff)

158.46 ns

IGBT Type

Trench Field Stop

Gate Charge

129nC

Current - Collector Pulsed (Icm)

160A

Td (on/off) @ 25°C

35ns/148ns

Switching Energy

1.43mJ (on), 3.83mJ (off)

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant

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