IXYS IXBH24N170

SKU: IXBH24N170-9

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Manufacturer Part :
IXBH24N170
Manufacturer :
IXYS
Package :
TO-247-3
RoHS :
ROHS3 Compliant
IXBH24N170 Datasheet :

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Description

Specification

Processor

Manufacturer

IXYS

Qualification Status

Not Qualified

Mounting Type

Through Hole

Package / Case

TO-247-3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

1.7kV

Number of Elements

1

Turn Off Delay Time

65 ns

Operating Temperature

-55°C~150°C TJ

Packaging

Tube

Published

2006

JESD-609 Code

e1

Pbfree Code

yes

Series

BIMOSFET™

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Terminal Finish

Tin/Silver/Copper (Sn/Ag/Cu)

Additional Feature

LOW CONDUCTION LOSS

Max Power Dissipation

250W

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Pin Count

3

JESD-30 Code

R-PSFM-T3

Mount

Through Hole

Factory Lead Time

28 Weeks

JEDEC-95 Code

TO-247AD

Gate to Source Voltage (Vgs)

30V

Input Type

Standard

Power - Max

250W

Transistor Application

POWER CONTROL

Rise Time

28ns

Polarity/Channel Type

N-CHANNEL

Fall Time (Typ)

26 ns

Collector Emitter Voltage (VCEO)

2.5V

Max Collector Current

60A

Reverse Recovery Time

1.06 μs

Continuous Drain Current (ID)

3.2A

Power Dissipation

38W

Element Configuration

Single

Voltage - Collector Emitter Breakdown (Max)

1700V

Drain to Source Breakdown Voltage

500V

Turn On Time

190 ns

Vce(on) (Max) @ Vge, Ic

2.5V @ 15V, 24A

Drain to Source Resistance

1.4Ohm

Turn Off Time-Nom (toff)

1285 ns

Gate Charge

140nC

Current - Collector Pulsed (Icm)

230A

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

5V

Case Connection

COLLECTOR

RoHS Status

ROHS3 Compliant

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