ON Semiconductor NGB18N40CLBT4G

SKU: NGB18N40CLBT4G-9

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Manufacturer Part :
NGB18N40CLBT4G
Manufacturer :
ON Semiconductor
Package :
RoHS :
RoHS Compliant
NGB18N40CLBT4G Datasheet :

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Description

Specification

Processor

Manufacturer

ON Semiconductor

Pbfree Code

yes

Mounting Type

Surface Mount

Number of Pins

3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

430V

Number of Elements

1

Operating Temperature

-55°C~175°C TJ

Packaging

Tape & Reel (TR)

Published

2006

Current Rating

18A

JESD-609 Code

e3

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

2

ECCN Code

EAR99

Terminal Finish

Tin (Sn)

Voltage - Rated DC

400V

Max Power Dissipation

115W

Terminal Form

GULL WING

Peak Reflow Temperature (Cel)

260

Mount

Surface Mount

Factory Lead Time

4 Weeks

Collector Emitter Voltage (VCEO)

430V

Base Part Number

NG*18N40CL

JESD-30 Code

R-PSSO-G2

Element Configuration

Single

Power Dissipation

115W

Case Connection

COLLECTOR

Input Type

Logic

Transistor Application

AUTOMOTIVE IGNITION

Rise Time

4.5ns

Polarity/Channel Type

N-CHANNEL

Max Collector Current

18A

Turn On Time

5200 ns

Time@Peak Reflow Temperature-Max (s)

40

Vce(on) (Max) @ Vge, Ic

2.5V @ 4V, 15A

Turn Off Time-Nom (toff)

13000 ns

Current - Collector Pulsed (Icm)

50A

Gate-Emitter Voltage-Max

18V

Gate-Emitter Thr Voltage-Max

1.9V

Fall Time-Max (tf)

15000ns

Radiation Hardening

No

RoHS Status

RoHS Compliant

Pin Count

3

Lead Free

Lead Free

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