IXYS IXGR35N120B

SKU: IXGR35N120B-9

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Manufacturer Part :
IXGR35N120B
Manufacturer :
IXYS
Package :
ISOPLUS247™
RoHS :
ROHS3 Compliant
IXGR35N120B Datasheet :

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Description

Specification

Processor

Manufacturer

IXYS

Series

HiPerFAST™

Mounting Type

Through Hole

Package / Case

ISOPLUS247™

Number of Pins

3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

1.2kV

Number of Elements

1

Test Conditions

960V, 35A, 4.7 Ω, 15V

Operating Temperature

-55°C~150°C TJ

Packaging

Tube

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Published

2001

JESD-609 Code

e1

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Terminal Finish

TIN SILVER COPPER

Max Power Dissipation

200W

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Reach Compliance Code

unknown

Mount

Through Hole

Factory Lead Time

8 Weeks

Voltage - Collector Emitter Breakdown (Max)

1200V

Pin Count

3

Polarity

NPN

Element Configuration

Single

Power Dissipation

200W

Case Connection

ISOLATED

Input Type

Standard

Transistor Application

POWER CONTROL

Rise Time

160ns

Collector Emitter Voltage (VCEO)

1.2kV

Max Collector Current

70A

Turn On Time

86 ns

Vce(on) (Max) @ Vge, Ic

3.3V @ 15V, 35A

Base Part Number

IXG*35N120

Turn Off Time-Nom (toff)

660 ns

IGBT Type

PT

Gate Charge

170nC

Current - Collector Pulsed (Icm)

140A

Td (on/off) @ 25°C

50ns/180ns

Switching Energy

3.8mJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

5V

REACH SVHC

No SVHC

Qualification Status

Not Qualified

RoHS Status

ROHS3 Compliant

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