IXYS IXGH25N120

SKU: IXGH25N120-9

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Manufacturer Part :
IXGH25N120
Manufacturer :
IXYS
Package :
TO-247-3
RoHS :
ROHS3 Compliant
IXGH25N120 Datasheet :

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Description

Specification

Processor

Manufacturer

IXYS

Packaging

Tube

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Weight

6.500007g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

1.2kV

Number of Elements

1

Test Conditions

960V, 25A, 33 Ω, 15V

Time@Peak Reflow Temperature-Max (s)

35

Operating Temperature

-55°C~150°C TJ

Published

1997

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Terminal Finish

Matte Tin (Sn)

Max Power Dissipation

200W

Peak Reflow Temperature (Cel)

260

Mount

Through Hole

Factory Lead Time

8 Weeks

Voltage - Collector Emitter Breakdown (Max)

1200V

Qualification Status

Not Qualified

Case Connection

COLLECTOR

Input Type

Standard

Power - Max

200W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

1.2kV

Max Collector Current

50A

JEDEC-95 Code

TO-247AD

Turn On Time

350 ns

Vce(on) (Max) @ Vge, Ic

3V @ 15V, 25A

Pin Count

3

Turn Off Time-Nom (toff)

1920 ns

Gate Charge

130nC

Current - Collector Pulsed (Icm)

100A

Td (on/off) @ 25°C

100ns/650ns

Switching Energy

11mJ (off)

Gate-Emitter Voltage-Max

20V

VCEsat-Max

3 V

Gate-Emitter Thr Voltage-Max

6V

Element Configuration

Single

RoHS Status

ROHS3 Compliant

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