IXYS IXGX60N60B2D1

SKU: IXGX60N60B2D1-9

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Manufacturer Part :
IXGX60N60B2D1
Manufacturer :
IXYS
Package :
TO-247-3
RoHS :
RoHS Compliant
IXGX60N60B2D1 Datasheet :

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Description

Specification

Processor

Manufacturer

IXYS

Published

2003

Package / Case

TO-247-3

Number of Pins

3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

400V, 50A, 3.3 Ω, 15V

Turn Off Delay Time

310 ns

Operating Temperature

-55°C~150°C TJ

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Packaging

Tube

Series

HiPerFAST™

JESD-609 Code

e1

Pbfree Code

yes

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Terminal Finish

Tin/Silver/Copper (Sn/Ag/Cu)

Max Power Dissipation

500W

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Mounting Type

Through Hole

Mount

Through Hole

Max Collector Current

75A

Pin Count

3

Element Configuration

Single

Case Connection

COLLECTOR

Input Type

Standard

Turn On Delay Time

28 ns

Power - Max

500W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

600V

Reverse Recovery Time

35 ns

Turn On Time

64 ns

Base Part Number

IXG*60N60

Vce(on) (Max) @ Vge, Ic

1.8V @ 15V, 50A

Turn Off Time-Nom (toff)

550 ns

IGBT Type

PT

Gate Charge

170nC

Current - Collector Pulsed (Icm)

300A

Td (on/off) @ 25°C

28ns/160ns

Switching Energy

1mJ (off)

RoHS Status

RoHS Compliant

Qualification Status

Not Qualified

Lead Free

Lead Free

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