IXYS IXGR32N170H1

SKU: IXGR32N170H1-9

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Manufacturer Part :
IXGR32N170H1
Manufacturer :
IXYS
Package :
ISOPLUS247™
RoHS :
RoHS Compliant
IXGR32N170H1 Datasheet :

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Description

Specification

Processor

Manufacturer

IXYS

Published

2004

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

ISOPLUS247™

Number of Pins

3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

1.7kV

Number of Elements

1

Test Conditions

1360V, 21A, 2.7 Ω, 15V

Operating Temperature

-55°C~150°C TJ

Polarity

NPN

Factory Lead Time

8 Weeks

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Additional Feature

UL RECOGNIZED

Max Power Dissipation

200W

Base Part Number

IXG*32N170

Pin Count

3

Qualification Status

Not Qualified

Packaging

Bulk

Element Configuration

Single

Vce(on) (Max) @ Vge, Ic

3.5V @ 15V, 21A

Turn Off Time-Nom (toff)

920 ns

Power - Max

200W

Transistor Application

POWER CONTROL

Rise Time

250ns

Collector Emitter Voltage (VCEO)

1.7kV

Max Collector Current

38A

Reverse Recovery Time

230 ns

JEDEC-95 Code

TO-247AD

Voltage - Collector Emitter Breakdown (Max)

1700V

Turn On Time

90 ns

Case Connection

ISOLATED

Input Type

Standard

IGBT Type

NPT

Gate Charge

155nC

Current - Collector Pulsed (Icm)

200A

Td (on/off) @ 25°C

45ns/270ns

Switching Energy

10.6mJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

5V

Fall Time-Max (tf)

500ns

REACH SVHC

No SVHC

RoHS Status

RoHS Compliant

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