Infineon Technologies IRGIB10B60KD1P

SKU: IRGIB10B60KD1P-9

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Manufacturer Part :
IRGIB10B60KD1P
Manufacturer :
Infineon Technologies
Package :
TO-220-3 Full Pack
RoHS :
ROHS3 Compliant
IRGIB10B60KD1P Datasheet :

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Description

Specification

Processor

Manufacturer

Infineon Technologies

Operating Temperature

-55°C~175°C TJ

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-220-3 Full Pack

Number of Pins

3

Weight

2.299997g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Element Configuration

Single

Factory Lead Time

16 Weeks

Packaging

Tube

Published

2004

Part Status

Last Time Buy

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Voltage - Rated DC

600V

Max Power Dissipation

44W

Current Rating

16A

Test Conditions

400V, 10A, 50 Ω, 15V

Case Connection

ISOLATED

Turn Off Time-Nom (toff)

288 ns

IGBT Type

NPT

Rise Time

24ns

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

2.1V

Max Collector Current

16A

Reverse Recovery Time

79 ns

JEDEC-95 Code

TO-220AB

Turn On Time

46 ns

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 10A

Input Type

Standard

Transistor Application

MOTOR CONTROL

Gate Charge

41nC

Current - Collector Pulsed (Icm)

32A

Td (on/off) @ 25°C

25ns/180ns

Switching Energy

156μJ (on), 165μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

5.5V

Fall Time-Max (tf)

87ns

Radiation Hardening

No

RoHS Status

ROHS3 Compliant

Lead Free

Lead Free

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