Infineon Technologies IRG7PH50UPBF

SKU: IRG7PH50UPBF-9

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Manufacturer Part :
IRG7PH50UPBF
Manufacturer :
Infineon Technologies
Package :
TO-247-3
RoHS :
RoHS Compliant
IRG7PH50UPBF Datasheet :

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Description

Specification

Processor

Manufacturer

Infineon Technologies

Operating Temperature

-55°C~175°C TJ

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Weight

38.000013g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

1.2kV

Number of Elements

1

Test Conditions

600V, 50A, 5 Ω, 15V

Input Type

Standard

Factory Lead Time

14 Weeks

Packaging

Tube

Published

2004

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Max Power Dissipation

556W

Rise Time-Max

60ns

Element Configuration

Single

Case Connection

COLLECTOR

Turn Off Delay Time

430 ns

Turn On Delay Time

35 ns

Gate Charge

290nC

Current - Collector Pulsed (Icm)

150A

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

2V

Max Collector Current

140A

JEDEC-95 Code

TO-247AC

Voltage - Collector Emitter Breakdown (Max)

1200V

Turn On Time

75 ns

Vce(on) (Max) @ Vge, Ic

2V @ 15V, 50A

Turn Off Time-Nom (toff)

710 ns

IGBT Type

Trench

Power - Max

556W

Transistor Application

POWER CONTROL

Td (on/off) @ 25°C

35ns/430ns

Switching Energy

3.6mJ (on), 2.2mJ (off)

Gate-Emitter Thr Voltage-Max

6V

Fall Time-Max (tf)

65ns

Height

20.7mm

Length

15.87mm

Width

5.31mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

RoHS Compliant

Lead Free

Lead Free

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