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| Manufacturer |
Microsemi Corporation |
|---|---|
| Package Style |
FLANGE MOUNT |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Surface Mount |
NO |
| Supplier Device Package |
TO-247 [B] |
| Number of Terminals |
3 |
| Transistor Element Material |
SILICON |
| Base Product Number |
APT20GT60 |
| Part Life Cycle Code |
Active |
| Manufacturer Part Number |
APT20GT60BRG |
| Mfr |
Microchip Technology |
| Operating Temperature-Max |
150 °C |
| Package |
Tube |
| Package Body Material |
PLASTIC/EPOXY |
| Package Description |
ROHS COMPLIANT, TO-247, 3 PIN |
| Package Shape |
RECTANGULAR |
| Subcategory |
Insulated Gate BIP Transistors |
| Mount |
Through Hole |
| Voltage Rating (DC) |
600 V |
| Product Status |
Active |
| Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Risk Rank |
5.14 |
| Rohs Code |
Yes |
| Turn-off Time-Nom (toff) |
160 ns |
| Turn-on Time-Nom (ton) |
17 ns |
| Part Package Code |
TO-247AD |
| Series |
Thunderbolt IGBT® |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| JESD-609 Code |
e1 |
| Pbfree Code |
Yes |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
| Max Operating Temperature |
150 °C |
| Min Operating Temperature |
-55 °C |
| Ihs Manufacturer |
MICROSEMI CORP |
| Max Power Dissipation |
174 W |
| Configuration |
SINGLE |
| Max Collector Current |
43 A |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Reach Compliance Code |
unknown |
| Current Rating |
43 A |
| Pin Count |
3 |
| JESD-30 Code |
R-PSFM-T3 |
| Qualification Status |
Not Qualified |
| Number of Elements |
1 |
| JEDEC-95 Code |
TO-247AD |
| Element Configuration |
Single |
| Case Connection |
COLLECTOR |
| Input Type |
Standard |
| Power - Max |
174 W |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
600 V |
| Terminal Position |
SINGLE |
| Terminal Form |
THROUGH-HOLE |
| IGBT Type |
NPT |
| Voltage - Collector Emitter Breakdown (Max) |
600 V |
| Current - Collector (Ic) (Max) |
43 A |
| Power Dissipation-Max (Abs) |
174 W |
| Test Condition |
400V, 20A, 5Ohm, 15V |
| Vce(on) (Max) @ Vge, Ic |
2.5V @ 15V, 20A |
| Collector Current-Max (IC) |
43 A |
| Collector Emitter Breakdown Voltage |
600 V |
| Gate Charge |
100 nC |
| Collector-Emitter Voltage-Max |
600 V |
| Current - Collector Pulsed (Icm) |
80 A |
| Td (on/off) @ 25°C |
8ns/80ns |
| Switching Energy |
215µJ (on), 245µJ (off) |
| Gate-Emitter Voltage-Max |
30 V |
| Gate-Emitter Thr Voltage-Max |
5 V |
| Radiation Hardening |
No |
| Lead Free |
Lead Free |
In stock
| Manufacturer |
Infineon |
|---|---|
| Base Product Number |
SIGC84 |
| Mfr |
Infineon Technologies |
| Package |
Bulk |
| Product Status |
Active |
| Series |
TrenchStop™ |
| Input Type |
Standard |
| Voltage - Collector Emitter Breakdown (Max) |
1200 V |
| Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 75A |
| IGBT Type |
Trench Field Stop |
| Current - Collector Pulsed (Icm) |
225 A |
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Published |
2013 |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
1.2kV |
| Number of Elements |
1 |
| Test Conditions |
600V, 20A, 10 Ω, 15V |
| Operating Temperature |
-40°C~175°C TJ |
| Max Power Dissipation |
288W |
| Factory Lead Time |
26 Weeks |
| Series |
TrenchStop® |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Packaging |
Tube |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| JEDEC-95 Code |
TO-247AC |
| Voltage - Collector Emitter Breakdown (Max) |
1200V |
| Element Configuration |
Single |
| Case Connection |
COLLECTOR |
| Input Type |
Standard |
| Power - Max |
288W |
| Halogen Free |
Halogen Free |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
1.2kV |
| Max Collector Current |
40A |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| JESD-30 Code |
R-PSFM-T3 |
| Turn On Time |
92 ns |
| Vce(on) (Max) @ Vge, Ic |
1.75V @ 15V, 20A |
| Turn Off Time-Nom (toff) |
685 ns |
| Gate Charge |
170nC |
| Current - Collector Pulsed (Icm) |
60A |
| Td (on/off) @ 25°C |
-/260ns |
| Switching Energy |
750μJ (off) |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Element Configuration |
Dual |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
600V |
| Number of Elements |
1 |
| Test Conditions |
480V, 41A, 5 Ω, 15V |
| Turn Off Delay Time |
650 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Published |
2000 |
| JESD-609 Code |
e3 |
| Packaging |
Bulk |
| Part Status |
Last Time Buy |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Voltage - Rated DC |
600V |
| Max Power Dissipation |
200W |
| Terminal Position |
SINGLE |
| Peak Reflow Temperature (Cel) |
250 |
| Current Rating |
70A |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Mount |
Through Hole |
| Factory Lead Time |
14 Weeks |
| Current - Collector Pulsed (Icm) |
140A |
| Td (on/off) @ 25°C |
33ns/650ns |
| Turn On Delay Time |
33 ns |
| Rise Time |
30ns |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
1.36V |
| Max Collector Current |
70A |
| JEDEC-95 Code |
TO-247AC |
| Turn On Time |
62 ns |
| Vce(on) (Max) @ Vge, Ic |
1.36V @ 15V, 41A |
| Turn Off Time-Nom (toff) |
1700 ns |
| Gate Charge |
180nC |
| Case Connection |
COLLECTOR |
| Power Dissipation |
200W |
| Switching Energy |
720μJ (on), 8.27mJ (off) |
| Gate-Emitter Voltage-Max |
20V |
| Gate-Emitter Thr Voltage-Max |
6V |
| Fall Time-Max (tf) |
600ns |
| Height |
20.2946mm |
| Length |
15.875mm |
| Width |
5.3mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Input Type |
Standard |
| Lead Free |
Lead Free |
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tube |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Weight |
38.000013g |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
900V |
| Number of Elements |
1 |
| Test Conditions |
720V, 28A, 5 Ω, 15V |
| Turn Off Delay Time |
110 ns |
| Element Configuration |
Dual |
| Factory Lead Time |
14 Weeks |
| Published |
2004 |
| Part Status |
Last Time Buy |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Termination |
Through Hole |
| ECCN Code |
EAR99 |
| Additional Feature |
LOW CONDUCTION LOSS |
| Voltage - Rated DC |
600V |
| Max Power Dissipation |
200W |
| Terminal Position |
SINGLE |
| Current Rating |
51A |
| Operating Temperature |
-55°C~150°C TJ |
| Power Dissipation |
200W |
| Gate Charge |
160nC |
| Current - Collector Pulsed (Icm) |
204A |
| Turn On Delay Time |
29 ns |
| Transistor Application |
POWER CONTROL |
| Rise Time |
26ns |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
2.7V |
| Max Collector Current |
51A |
| JEDEC-95 Code |
TO-247AC |
| Turn On Time |
54 ns |
| Vce(on) (Max) @ Vge, Ic |
2.7V @ 15V, 28A |
| Turn Off Time-Nom (toff) |
370 ns |
| Case Connection |
COLLECTOR |
| Input Type |
Standard |
| Td (on/off) @ 25°C |
29ns/110ns |
| Switching Energy |
190μJ (on), 1.06mJ (off) |
| Gate-Emitter Voltage-Max |
20V |
| Gate-Emitter Thr Voltage-Max |
6V |
| Fall Time-Max (tf) |
220ns |
| Height |
20.3mm |
| Length |
15.875mm |
| Width |
5.3mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Published |
2004 |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Weight |
38.000013g |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
1.2kV |
| Number of Elements |
1 |
| Test Conditions |
960V, 33A, 5 Ω, 15V |
| Turn Off Delay Time |
845 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Input Type |
Standard |
| Packaging |
Bulk |
| Part Status |
Last Time Buy |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Termination |
Through Hole |
| ECCN Code |
EAR99 |
| Voltage - Rated DC |
1.2kV |
| Max Power Dissipation |
200W |
| Current Rating |
57A |
| Element Configuration |
Single |
| Power Dissipation |
200W |
| Case Connection |
COLLECTOR |
| Mount |
Through Hole |
| Factory Lead Time |
14 Weeks |
| Max Junction Temperature (Tj) |
150°C |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
1.2kV |
| Max Collector Current |
57A |
| Continuous Drain Current (ID) |
57A |
| JEDEC-95 Code |
TO-247AC |
| Gate to Source Voltage (Vgs) |
30V |
| Voltage - Collector Emitter Breakdown (Max) |
1200V |
| Input Capacitance |
3.6nF |
| Turn On Time |
62 ns |
| Vce(on) (Max) @ Vge, Ic |
1.7V @ 15V, 33A |
| Continuous Collector Current |
57A |
| Turn Off Time-Nom (toff) |
2170 ns |
| Turn On Delay Time |
32 ns |
| Gate Charge |
167nC |
| Current - Collector Pulsed (Icm) |
114A |
| Td (on/off) @ 25°C |
32ns/845ns |
| Switching Energy |
1.8mJ (on), 19.6mJ (off) |
| Height |
24.99mm |
| Length |
15.875mm |
| Width |
5.3mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Rise Time |
29ns |
| Lead Free |
Lead Free |
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Case Connection |
COLLECTOR |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
1.2kV |
| Number of Elements |
1 |
| Test Conditions |
960V, 24A, 5 Ω, 15V |
| Turn Off Delay Time |
200 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Published |
2000 |
| Part Status |
Last Time Buy |
| Packaging |
Tube |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Termination |
Through Hole |
| ECCN Code |
EAR99 |
| Additional Feature |
LOW CONDUCTION LOSS |
| Voltage - Rated DC |
1.2kV |
| Max Power Dissipation |
200W |
| Current Rating |
45A |
| Element Configuration |
Single |
| Power Dissipation |
200W |
| Mount |
Through Hole |
| Factory Lead Time |
14 Weeks |
| Current - Collector Pulsed (Icm) |
180A |
| Td (on/off) @ 25°C |
35ns/200ns |
| Rise Time |
15ns |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
3.7V |
| Max Collector Current |
45A |
| JEDEC-95 Code |
TO-247AC |
| Voltage - Collector Emitter Breakdown (Max) |
1200V |
| Turn On Time |
49 ns |
| Vce(on) (Max) @ Vge, Ic |
3.7V @ 15V, 24A |
| Turn Off Time-Nom (toff) |
600 ns |
| Gate Charge |
160nC |
| Turn On Delay Time |
35 ns |
| Input Type |
Standard |
| Switching Energy |
530μJ (on), 1.41mJ (off) |
| Gate-Emitter Voltage-Max |
20V |
| Gate-Emitter Thr Voltage-Max |
6V |
| Fall Time-Max (tf) |
500ns |
| Height |
20.3mm |
| Length |
15.875mm |
| Width |
5.3mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Transistor Application |
POWER CONTROL |
| Lead Free |
Lead Free |
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| JESD-30 Code |
R-PSSO-G2 |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
600V |
| Number of Elements |
1 |
| Test Conditions |
480V, 8A, 100 Ω, 15V |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Published |
2004 |
| JESD-609 Code |
e3 |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| Part Status |
Obsolete |
| Termination |
SMD/SMT |
| ECCN Code |
EAR99 |
| Terminal Finish |
MATTE TIN OVER NICKEL |
| Additional Feature |
LOW CONDUCTION LOSS |
| Voltage - Rated DC |
600V |
| Max Power Dissipation |
38W |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Current Rating |
14A |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Base Part Number |
IRG4RC10SDPBF |
| Mount |
Surface Mount |
| Factory Lead Time |
8 Weeks |
| Gate Charge |
15nC |
| Current - Collector Pulsed (Icm) |
18A |
| Input Type |
Standard |
| Transistor Application |
POWER CONTROL |
| Rise Time |
31ns |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
1.8V |
| Max Collector Current |
14A |
| Reverse Recovery Time |
28 ns |
| JEDEC-95 Code |
TO-252AA |
| Turn On Time |
106 ns |
| Vce(on) (Max) @ Vge, Ic |
1.8V @ 15V, 8A |
| Turn Off Time-Nom (toff) |
1780 ns |
| Power Dissipation |
38W |
| Element Configuration |
Single |
| Td (on/off) @ 25°C |
76ns/815ns |
| Switching Energy |
310μJ (on), 3.28mJ (off) |
| Gate-Emitter Voltage-Max |
20V |
| Gate-Emitter Thr Voltage-Max |
6V |
| Fall Time-Max (tf) |
1080ns |
| Height |
1.2446mm |
| Length |
6.7056mm |
| Width |
6.22mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
RoHS Compliant |
| Case Connection |
COLLECTOR |
| Lead Free |
Lead Free |
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tube |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Weight |
38.000013g |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
600V |
| Number of Elements |
1 |
| Test Conditions |
390V, 33A, 3.3 Ω, 15V |
| Turn Off Delay Time |
130 ns |
| Case Connection |
COLLECTOR |
| Factory Lead Time |
14 Weeks |
| Published |
2004 |
| Part Status |
Last Time Buy |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Termination |
Through Hole |
| ECCN Code |
EAR99 |
| Voltage - Rated DC |
600V |
| Max Power Dissipation |
390W |
| Current Rating |
75A |
| Element Configuration |
Single |
| Power Dissipation |
390W |
| Operating Temperature |
-55°C~150°C TJ |
| Input Type |
Standard |
| Gate Charge |
205nC |
| Current - Collector Pulsed (Icm) |
150A |
| Rise Time |
10ns |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
2.85V |
| Max Collector Current |
75A |
| Reverse Recovery Time |
42 ns |
| JEDEC-95 Code |
TO-247AC |
| Turn On Time |
39 ns |
| Vce(on) (Max) @ Vge, Ic |
2.85V @ 15V, 50A |
| Turn Off Time-Nom (toff) |
161 ns |
| IGBT Type |
NPT |
| Turn On Delay Time |
30 ns |
| Transistor Application |
POWER CONTROL |
| Td (on/off) @ 25°C |
30ns/130ns |
| Switching Energy |
255μJ (on), 375μJ (off) |
| Gate-Emitter Voltage-Max |
20V |
| Gate-Emitter Thr Voltage-Max |
5V |
| Fall Time-Max (tf) |
20ns |
| Height |
20.7mm |
| Length |
15.87mm |
| Width |
5.3086mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
In stock
| Manufacturer |
International Rectifier |
|---|---|
| Input Type |
Standard |
| Package / Case |
TO-247-3 |
| Supplier Device Package |
TO-247AD |
| Mfr |
International Rectifier |
| Package |
Bulk |
| Product Status |
Active |
| Operating Temperature |
-40°C ~ 175°C (TJ) |
| Mounting Type |
Through Hole |
| Voltage - Collector Emitter Breakdown (Max) |
650 V |
| Power - Max |
325 W |
| Current - Collector (Ic) (Max) |
90 A |
| Test Condition |
400V, 48A, 10Ohm, 15V |
| Vce(on) (Max) @ Vge, Ic |
2V @ 15V, 48A |
| Gate Charge |
145 nC |
| Current - Collector Pulsed (Icm) |
144 A |
| Td (on/off) @ 25°C |
70ns/140ns |
| Switching Energy |
1.7mJ (on), 1mJ (off) |
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Packaging |
Tube |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Weight |
6.39g |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
1.2kV |
| Number of Elements |
1 |
| Test Conditions |
960V, 27A, 3 Ω, 15V |
| Turn Off Delay Time |
240 ns |
| Current Rating |
72A |
| Factory Lead Time |
44 Weeks |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Not For New Designs |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| HTS Code |
8541.29.00.95 |
| Voltage - Rated DC |
1.2kV |
| Max Power Dissipation |
500W |
| Operating Temperature |
-55°C~150°C TJ |
| Element Configuration |
Single |
| Turn Off Time-Nom (toff) |
360 ns |
| IGBT Type |
NPT |
| Input Type |
Standard |
| Turn On Delay Time |
24 ns |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
1.2kV |
| Max Collector Current |
72A |
| Voltage - Collector Emitter Breakdown (Max) |
1200V |
| Turn On Time |
42 ns |
| Vce(on) (Max) @ Vge, Ic |
2.7V @ 15V, 27A |
| Continuous Collector Current |
72A |
| Power Dissipation |
500W |
| Case Connection |
COLLECTOR |
| Gate Charge |
270nC |
| Current - Collector Pulsed (Icm) |
216A |
| Td (on/off) @ 25°C |
24ns/195ns |
| Switching Energy |
2.2mJ (on), 2.3mJ (off) |
| Height |
20.82mm |
| Length |
15.87mm |
| Width |
4.82mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Published |
2012 |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Weight |
6.500007g |
| Collector-Emitter Breakdown Voltage |
1.2kV |
| Test Conditions |
600V, 40A, 10 Ω, 15V |
| Operating Temperature |
-55°C~175°C TJ |
| Element Configuration |
Single |
| Packaging |
Tube |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Max Power Dissipation |
535W |
| Pin Count |
3 |
| Mount |
Through Hole |
| Factory Lead Time |
13 Weeks |
| Current - Collector Pulsed (Icm) |
200A |
| Power - Max |
535W |
| Collector Emitter Voltage (VCEO) |
1.2kV |
| Max Collector Current |
80A |
| Reverse Recovery Time |
240 ns |
| Voltage - Collector Emitter Breakdown (Max) |
1200V |
| Vce(on) (Max) @ Vge, Ic |
2.4V @ 15V, 40A |
| IGBT Type |
Trench Field Stop |
| Gate Charge |
313nC |
| Td (on/off) @ 25°C |
116ns/286ns |
| Switching Energy |
3.4mJ (on), 1.1mJ (off) |
| Input Type |
Standard |
| Gate-Emitter Voltage-Max |
20V |
| Gate-Emitter Thr Voltage-Max |
6.5V |
| Height |
21.4mm |
| Length |
16.25mm |
| Width |
5.3mm |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Polarity/Channel Type |
N-CHANNEL |
| Lead Free |
Lead Free |
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Series |
PowerMESH™ |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
600V |
| Number of Elements |
1 |
| Test Conditions |
390V, 20A, 10 Ω, 15V |
| Turn Off Delay Time |
118 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Element Configuration |
Single |
| Factory Lead Time |
8 Weeks |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Voltage - Rated DC |
600V |
| Max Power Dissipation |
200W |
| Current Rating |
60A |
| Base Part Number |
STGW30 |
| Pin Count |
3 |
| Packaging |
Tube |
| Power Dissipation |
200W |
| Turn Off Time-Nom (toff) |
189 ns |
| Gate Charge |
102nC |
| Turn On Delay Time |
29.5 ns |
| Transistor Application |
POWER CONTROL |
| Rise Time |
12ns |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
600V |
| Max Collector Current |
60A |
| Reverse Recovery Time |
40 ns |
| JEDEC-95 Code |
TO-247AC |
| Turn On Time |
42.5 ns |
| Vce(on) (Max) @ Vge, Ic |
2.5V @ 15V, 20A |
| Case Connection |
ISOLATED |
| Input Type |
Standard |
| Current - Collector Pulsed (Icm) |
150A |
| Td (on/off) @ 25°C |
29.5ns/118ns |
| Switching Energy |
305μJ (on), 181μJ (off) |
| Gate-Emitter Voltage-Max |
20V |
| Gate-Emitter Thr Voltage-Max |
5.75V |
| Height |
20.15mm |
| Length |
15.75mm |
| Width |
5.15mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
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