ON Semiconductor FGA25N120ANTDTU

SKU: FGA25N120ANTDTU-9

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Manufacturer Part :
FGA25N120ANTDTU
Manufacturer :
ON Semiconductor
Package :
TO-3P-3, SC-65-3
RoHS :
ROHS3 Compliant
FGA25N120ANTDTU Datasheet :

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Description

Specification

Processor

Manufacturer

ON Semiconductor

Published

2004

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-3P-3, SC-65-3

Number of Pins

3

Weight

6.40101g

Collector-Emitter Breakdown Voltage

1.2kV

Test Conditions

600V, 25A, 10 Ω, 15V

Turn Off Delay Time

190 ns

Operating Temperature

-55°C~150°C TJ

Element Configuration

Single

Factory Lead Time

6 Weeks

JESD-609 Code

e3

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

ECCN Code

EAR99

Terminal Finish

Tin (Sn)

HTS Code

8541.29.00.95

Voltage - Rated DC

1.2kV

Max Power Dissipation

312W

Current Rating

50A

Base Part Number

FGA25N120A

Packaging

Tube

Power Dissipation

312mW

IGBT Type

NPT and Trench

Gate Charge

200nC

Rise Time

60ns

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

1.2kV

Max Collector Current

50A

Reverse Recovery Time

350 ns

Voltage - Collector Emitter Breakdown (Max)

1200V

Vce(on) (Max) @ Vge, Ic

2.65V @ 15V, 50A

Max Junction Temperature (Tj)

150°C

Continuous Collector Current

50A

Input Type

Standard

Turn On Delay Time

50 ns

Current - Collector Pulsed (Icm)

90A

Td (on/off) @ 25°C

50ns/190ns

Switching Energy

4.1mJ (on), 960μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

7.5V

Height

23.8mm

Length

15.8mm

Width

5mm

Radiation Hardening

No

RoHS Status

ROHS3 Compliant

Lead Free

Lead Free

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