ON Semiconductor HGTD1N120BNS9A

SKU: HGTD1N120BNS9A-9

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Manufacturer Part :
HGTD1N120BNS9A
Manufacturer :
ON Semiconductor
Package :
RoHS :
ROHS3 Compliant
HGTD1N120BNS9A Datasheet :

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Description

Specification

Processor

Manufacturer

ON Semiconductor

JESD-30 Code

R-PSSO-G2

Mounting Type

Surface Mount

Number of Pins

3

Weight

260.37mg

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

1.2kV

Number of Elements

1

Test Conditions

960V, 1A, 82 Ω, 15V

Turn Off Delay Time

67 ns

Operating Temperature

-55°C~150°C TJ

Published

2014

Pbfree Code

yes

Packaging

Tape & Reel (TR)

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

2

ECCN Code

EAR99

HTS Code

8541.29.00.95

Voltage - Rated DC

1.2kV

Max Power Dissipation

60W

Terminal Form

GULL WING

Current Rating

5.3A

Base Part Number

HGTD1N120

Mount

Surface Mount

Factory Lead Time

7 Weeks

Turn On Time

24 ns

Vce(on) (Max) @ Vge, Ic

2.9V @ 15V, 1A

Case Connection

COLLECTOR

Input Type

Standard

Turn On Delay Time

15 ns

Transistor Application

MOTOR CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

1.2kV

Max Collector Current

5.3A

JEDEC-95 Code

TO-252AA

Voltage - Collector Emitter Breakdown (Max)

1200V

Max Breakdown Voltage

1.2kV

Element Configuration

Single

Rise Time-Max

14ns

Turn Off Time-Nom (toff)

333 ns

IGBT Type

NPT

Gate Charge

14nC

Current - Collector Pulsed (Icm)

6A

Td (on/off) @ 25°C

15ns/67ns

Switching Energy

70μJ (on), 90μJ (off)

Gate-Emitter Voltage-Max

20V

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant

Power Dissipation

60W

Lead Free

Lead Free

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