ON Semiconductor NGTB25N120FL2WG

SKU: NGTB25N120FL2WG-9

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Manufacturer Part :
NGTB25N120FL2WG
Manufacturer :
ON Semiconductor
Package :
TO-247-3
RoHS :
ROHS3 Compliant
NGTB25N120FL2WG Datasheet :

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Description

Specification

Processor

Manufacturer

ON Semiconductor

Published

2014

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Collector-Emitter Breakdown Voltage

1.2kV

Test Conditions

600V, 25A, 10 Ω, 15V

Operating Temperature

-55°C~175°C TJ

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Packaging

Tube

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

ECCN Code

EAR99

Terminal Finish

Tin (Sn)

Max Power Dissipation

385W

Mount

Through Hole

Factory Lead Time

33 Weeks

Vce(on) (Max) @ Vge, Ic

2.4V @ 15V, 25A

Element Configuration

Single

Power - Max

385W

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

2.4V

Max Collector Current

50A

Reverse Recovery Time

154 ns

Voltage - Collector Emitter Breakdown (Max)

1200V

IGBT Type

Field Stop

Gate Charge

178nC

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Current - Collector Pulsed (Icm)

100A

Td (on/off) @ 25°C

87ns/179ns

Switching Energy

1.95mJ (on), 600μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

6.5V

RoHS Status

ROHS3 Compliant

Input Type

Standard

Lead Free

Lead Free

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