ON Semiconductor HGTG30N60B3D

SKU: HGTG30N60B3D-9

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Manufacturer Part :
HGTG30N60B3D
Manufacturer :
ON Semiconductor
Package :
TO-247-3
RoHS :
ROHS3 Compliant
HGTG30N60B3D Datasheet :

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Description

Specification

Processor

Manufacturer

ON Semiconductor

Voltage - Rated DC

600V

Package / Case

TO-247-3

Number of Pins

3

Weight

6.39g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

480V, 30A, 3 Ω, 15V

Turn Off Delay Time

137 ns

Packaging

Tube

Published

2011

Operating Temperature

-55°C~150°C TJ

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Not For New Designs

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Terminal Finish

Tin (Sn)

Additional Feature

LOW CONDUCTION LOSS

HTS Code

8541.29.00.95

Mounting Type

Through Hole

Mount

Through Hole

Reverse Recovery Time

55 ns

Turn On Time

56 ns

Element Configuration

Single

Power Dissipation

208W

Input Type

Standard

Turn On Delay Time

36 ns

Transistor Application

POWER CONTROL

Rise Time

25ns

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

600V

Max Collector Current

60A

Current Rating

60A

Max Power Dissipation

208W

Vce(on) (Max) @ Vge, Ic

1.9V @ 15V, 30A

Turn Off Time-Nom (toff)

365 ns

Gate Charge

170nC

Current - Collector Pulsed (Icm)

220A

Td (on/off) @ 25°C

36ns/137ns

Switching Energy

550μJ (on), 680μJ (off)

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant

Base Part Number

HGTG30N60

Lead Free

Lead Free

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