Infineon Technologies IRG4PC50UPBF

SKU: IRG4PC50UPBF-9

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Manufacturer Part :
IRG4PC50UPBF
Manufacturer :
Infineon Technologies
Package :
TO-247-3
RoHS :
ROHS3 Compliant
IRG4PC50UPBF Datasheet :
IRG4PC50UPBF

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Description

Specification

Processor

Manufacturer

Infineon Technologies

Published

2001

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

480V, 27A, 5 Ω, 15V

Turn Off Delay Time

170 ns

Operating Temperature

-55°C~150°C TJ

Case Connection

COLLECTOR

Packaging

Bulk

Part Status

Last Time Buy

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Termination

Through Hole

ECCN Code

EAR99

Voltage - Rated DC

600V

Max Power Dissipation

200W

Current Rating

55A

Element Configuration

Single

Power Dissipation

200W

Mount

Through Hole

Factory Lead Time

14 Weeks

Gate Charge

180nC

Turn On Delay Time

32 ns

Rise Time

20ns

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

2V

Max Collector Current

55A

JEDEC-95 Code

TO-247AC

Input Capacitance

4nF

Turn On Time

54 ns

Vce(on) (Max) @ Vge, Ic

2V @ 15V, 27A

Turn Off Time-Nom (toff)

350 ns

Current - Collector Pulsed (Icm)

220A

Td (on/off) @ 25°C

32ns/170ns

Input Type

Standard

Switching Energy

120μJ (on), 540μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

6V

Height

20.3mm

Length

15.875mm

Width

5.3mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant

Transistor Application

POWER CONTROL

Lead Free

Contains Lead, Lead Free

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