ON Semiconductor FGD3N60UNDF

SKU: FGD3N60UNDF-9

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Manufacturer Part :
FGD3N60UNDF
Manufacturer :
ON Semiconductor
Package :
RoHS :
ROHS3 Compliant
FGD3N60UNDF Datasheet :

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Description

Specification

Processor

Manufacturer

ON Semiconductor

JESD-609 Code

e3

Mount

Surface Mount

Mounting Type

Surface Mount

Number of Pins

3

Weight

260.37mg

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

400V, 3A, 10 Ω, 15V

Operating Temperature

-55°C~150°C TJ

Packaging

Cut Tape (CT)

JESD-30 Code

R-PSSO-G2

Factory Lead Time

7 Weeks

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

2

ECCN Code

EAR99

Terminal Finish

Tin (Sn)

HTS Code

8541.29.00.95

Max Power Dissipation

60W

Terminal Form

GULL WING

Base Part Number

FGD3N60

Published

2013

Element Configuration

Single

IGBT Type

NPT

Gate Charge

1.6nC

Input Type

Standard

Transistor Application

MOTOR CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

600V

Max Collector Current

6A

Reverse Recovery Time

21ns

Max Breakdown Voltage

600V

Turn On Time

7.4 ns

Vce(on) (Max) @ Vge, Ic

2.52V @ 15V, 3A

Turn Off Time-Nom (toff)

146 ns

Power Dissipation

60W

Case Connection

COLLECTOR

Current - Collector Pulsed (Icm)

9A

Td (on/off) @ 25°C

5.5ns/22ns

Switching Energy

52μJ (on), 30μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

8.5V

Height

2.3mm

Length

6.6mm

Width

6.1mm

Radiation Hardening

No

RoHS Status

ROHS3 Compliant

Lead Free

Lead Free

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