ON Semiconductor FGH60N60SFDTU

SKU: FGH60N60SFDTU-9

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Manufacturer Part :
FGH60N60SFDTU
Manufacturer :
ON Semiconductor
Package :
TO-247-3
RoHS :
ROHS3 Compliant
FGH60N60SFDTU Datasheet :
FGH60N60SFDTU

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Description

Specification

Processor

Manufacturer

ON Semiconductor

Published

2017

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Weight

6.39g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

400V, 60A, 5 Ω, 15V

Operating Temperature

-55°C~150°C TJ

Base Part Number

FGH60N60

Factory Lead Time

5 Weeks

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Terminal Finish

Tin (Sn)

Additional Feature

LOW CONDUCTION LOSS

HTS Code

8541.29.00.95

Max Power Dissipation

378W

Packaging

Tube

Element Configuration

Single

IGBT Type

Field Stop

Gate Charge

198nC

Power - Max

378W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

600V

Max Collector Current

120A

Reverse Recovery Time

47 ns

JEDEC-95 Code

TO-247AB

Turn On Time

66 ns

Vce(on) (Max) @ Vge, Ic

2.9V @ 15V, 60A

Turn Off Time-Nom (toff)

187 ns

Case Connection

COLLECTOR

Input Type

Standard

Current - Collector Pulsed (Icm)

180A

Td (on/off) @ 25°C

22ns/134ns

Switching Energy

1.79mJ (on), 670μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

6.5V

Fall Time-Max (tf)

62ns

Height

20.6mm

Length

15.6mm

Width

4.7mm

Radiation Hardening

No

RoHS Status

ROHS3 Compliant

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