Infineon Technologies IRG4BC30FDPBF

SKU: IRG4BC30FDPBF-9

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Manufacturer Part :
IRG4BC30FDPBF
Manufacturer :
Infineon Technologies
Package :
TO-220-3
RoHS :
ROHS3 Compliant
IRG4BC30FDPBF Datasheet :

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Description

Specification

Processor

Manufacturer

Infineon Technologies

Published

1998

Mounting Type

Through Hole

Package / Case

TO-220-3

Number of Pins

3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

480V, 17A, 23 Ω, 15V

Turn Off Delay Time

230 ns

Operating Temperature

-55°C~150°C TJ

Case Connection

COLLECTOR

Packaging

Tube

Part Status

Last Time Buy

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Termination

Through Hole

ECCN Code

EAR99

Voltage - Rated DC

600V

Max Power Dissipation

100W

Current Rating

31A

Element Configuration

Single

Power Dissipation

100W

Mount

Through Hole

Factory Lead Time

16 Weeks

Gate Charge

51nC

Turn On Delay Time

42 ns

Rise Time

26ns

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

1.8V

Max Collector Current

31A

Reverse Recovery Time

42 ns

JEDEC-95 Code

TO-220AB

Turn On Time

69 ns

Vce(on) (Max) @ Vge, Ic

1.8V @ 15V, 17A

Turn Off Time-Nom (toff)

620 ns

Current - Collector Pulsed (Icm)

124A

Td (on/off) @ 25°C

42ns/230ns

Input Type

Standard

Switching Energy

630μJ (on), 1.39mJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

6V

Height

8.77mm

Length

10.54mm

Width

4.69mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant

Transistor Application

POWER CONTROL

Lead Free

Lead Free

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