STMicroelectronics STGP19NC60KD

SKU: STGP19NC60KD-9

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Manufacturer Part :
STGP19NC60KD
Manufacturer :
STMicroelectronics
Package :
TO-220-3
RoHS :
ROHS3 Compliant
STGP19NC60KD Datasheet :
STGP19NC60KD

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Description

Specification

Processor

Manufacturer

STMicroelectronics

Element Configuration

Single

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-220-3

Weight

6.000006g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

480V, 12A, 10 Ω, 15V

Operating Temperature

-55°C~150°C TJ

Packaging

Tube

Turn Off Delay Time

105 ns

Series

PowerMESH™

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Max Power Dissipation

125W

Base Part Number

STGP19

Pin Count

3

JESD-30 Code

R-PSFM-T3

Contact Plating

Tin

Factory Lead Time

8 Weeks

Gate Charge

55nC

Current - Collector Pulsed (Icm)

75A

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

600V

Max Collector Current

35A

Reverse Recovery Time

31 ns

JEDEC-95 Code

TO-220AB

Turn On Time

38 ns

Vce(on) (Max) @ Vge, Ic

2.75V @ 15V, 12A

Turn Off Time-Nom (toff)

270 ns

Turn On Delay Time

30 ns

Input Type

Standard

Td (on/off) @ 25°C

30ns/105ns

Switching Energy

165μJ (on), 255μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

6.5V

Height

9.15mm

Length

10.4mm

Width

4.6mm

Radiation Hardening

No

RoHS Status

ROHS3 Compliant

Power - Max

125W

Lead Free

Lead Free

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