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Manufacturer |
ON Semiconductor |
---|---|
Published |
2002 |
Mounting Type |
Through Hole |
Package / Case |
TO-220-3 |
Number of Pins |
3 |
Weight |
1.8g |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
390V, 12A, 10 Ω, 15V |
Turn Off Delay Time |
96 ns |
Operating Temperature |
-55°C~150°C TJ |
Current Rating |
54A |
Packaging |
Tube |
JESD-609 Code |
e3 |
Pbfree Code |
yes |
Part Status |
Not For New Designs |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Terminal Finish |
Tin (Sn) |
Additional Feature |
LOW CONDUCTION LOSS |
HTS Code |
8541.29.00.95 |
Voltage - Rated DC |
600V |
Max Power Dissipation |
167W |
Mount |
Through Hole |
Factory Lead Time |
5 Weeks |
Vce(on) (Max) @ Vge, Ic |
2.7V @ 15V, 12A |
Element Configuration |
Single |
Case Connection |
COLLECTOR |
Input Type |
Standard |
Turn On Delay Time |
17 ns |
Transistor Application |
POWER CONTROL |
Rise Time |
8ns |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
600V |
Max Collector Current |
54A |
Reverse Recovery Time |
18 ns |
Turn On Time |
33 ns |
Continuous Collector Current |
54A |
Turn Off Time-Nom (toff) |
180 ns |
Base Part Number |
HGTP12N60 |
Gate Charge |
78nC |
Current - Collector Pulsed (Icm) |
96A |
Td (on/off) @ 25°C |
17ns/96ns |
Switching Energy |
55μJ (on), 50μJ (off) |
Height |
9.4mm |
Length |
10.67mm |
Width |
4.83mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Power Dissipation |
167W |
Lead Free |
Lead Free |
In stock
Manufacturer |
Infineon |
---|---|
Base Product Number |
SIGC84 |
Mfr |
Infineon Technologies |
Package |
Bulk |
Product Status |
Active |
Series |
TrenchStop™ |
Input Type |
Standard |
Voltage - Collector Emitter Breakdown (Max) |
1200 V |
Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 75A |
IGBT Type |
Trench Field Stop |
Current - Collector Pulsed (Icm) |
225 A |
In stock
Manufacturer |
Infineon Technologies |
---|---|
Packaging |
Tube |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Number of Pins |
3 |
Collector-Emitter Breakdown Voltage |
650V |
Test Conditions |
400V, 20A, 15 Ω, 15V |
ECCN Code |
EAR99 |
Factory Lead Time |
16 Weeks |
Published |
2008 |
Series |
TrenchStop® |
JESD-609 Code |
e3 |
Pbfree Code |
yes |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Operating Temperature |
-40°C~175°C TJ |
Terminal Finish |
Tin (Sn) |
Reverse Recovery Time |
62 ns |
Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 40A |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Element Configuration |
Single |
Power Dissipation |
255W |
Input Type |
Standard |
Collector Emitter Voltage (VCEO) |
1.65V |
Max Collector Current |
74A |
Max Power Dissipation |
255W |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Gate Charge |
95nC |
Current - Collector Pulsed (Icm) |
120A |
Td (on/off) @ 25°C |
22ns/165ns |
Switching Energy |
390μJ (on), 120μJ (off) |
REACH SVHC |
Unknown |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
In stock
Manufacturer |
Infineon Technologies |
---|---|
Published |
2000 |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
480V, 31A, 10 Ω, 15V |
Turn Off Delay Time |
650 ns |
Operating Temperature |
-55°C~150°C TJ |
Power Dissipation |
160W |
Packaging |
Tube |
Part Status |
Last Time Buy |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Termination |
Through Hole |
ECCN Code |
EAR99 |
Voltage - Rated DC |
600V |
Max Power Dissipation |
160W |
Terminal Position |
SINGLE |
Current Rating |
60A |
Element Configuration |
Dual |
Mount |
Through Hole |
Factory Lead Time |
14 Weeks |
Current - Collector Pulsed (Icm) |
120A |
Input Type |
Standard |
Rise Time |
18ns |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
1.5V |
Max Collector Current |
60A |
JEDEC-95 Code |
TO-247AC |
Turn On Time |
44 ns |
Vce(on) (Max) @ Vge, Ic |
1.5V @ 15V, 31A |
Turn Off Time-Nom (toff) |
1940 ns |
Gate Charge |
100nC |
Td (on/off) @ 25°C |
22ns/650ns |
Switching Energy |
450μJ (on), 6.5mJ (off) |
Case Connection |
COLLECTOR |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
6V |
Fall Time-Max (tf) |
570ns |
Height |
20.7mm |
Length |
15.87mm |
Width |
5.3086mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Turn On Delay Time |
22 ns |
Lead Free |
Lead Free |
In stock
Manufacturer |
Infineon Technologies |
---|---|
Published |
1998 |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
480V, 20A, 10 Ω, 15V |
Turn Off Delay Time |
110 ns |
Operating Temperature |
-55°C~150°C TJ |
Input Type |
Standard |
Factory Lead Time |
14 Weeks |
Part Status |
Last Time Buy |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Termination |
Through Hole |
ECCN Code |
EAR99 |
Voltage - Rated DC |
600V |
Max Power Dissipation |
160W |
Current Rating |
40A |
Element Configuration |
Single |
Power Dissipation |
160W |
Case Connection |
COLLECTOR |
Packaging |
Bulk |
Turn On Delay Time |
54 ns |
Gate Charge |
100nC |
Current - Collector Pulsed (Icm) |
160A |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
600V |
Max Collector Current |
40A |
Reverse Recovery Time |
42 ns |
JEDEC-95 Code |
TO-247AC |
Turn On Time |
92 ns |
Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 20A |
Max Junction Temperature (Tj) |
150°C |
Continuous Collector Current |
40A |
Turn Off Time-Nom (toff) |
330 ns |
Transistor Application |
POWER CONTROL |
Rise Time |
57ns |
Td (on/off) @ 25°C |
54ns/110ns |
Switching Energy |
710μJ (on), 350μJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
6V |
Fall Time-Max (tf) |
120ns |
Height |
24.6mm |
Length |
15.875mm |
Width |
5.3mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
In stock
Manufacturer |
Infineon Technologies |
---|---|
Published |
2000 |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
1.2kV |
Number of Elements |
1 |
Test Conditions |
800V, 10A, 23 Ω, 15V |
Turn Off Delay Time |
220 ns |
Operating Temperature |
-55°C~150°C TJ |
Case Connection |
COLLECTOR |
Factory Lead Time |
14 Weeks |
Part Status |
Last Time Buy |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Termination |
Through Hole |
ECCN Code |
EAR99 |
Additional Feature |
LOW CONDUCTION LOSS |
Voltage - Rated DC |
1.2kV |
Max Power Dissipation |
100W |
Current Rating |
20A |
Element Configuration |
Single |
Power Dissipation |
100W |
Packaging |
Tube |
Input Type |
Standard |
Gate Charge |
53nC |
Current - Collector Pulsed (Icm) |
40A |
Rise Time |
79ns |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
4.2V |
Max Collector Current |
20A |
Reverse Recovery Time |
50 ns |
JEDEC-95 Code |
TO-247AC |
Voltage - Collector Emitter Breakdown (Max) |
1200V |
Turn On Time |
121 ns |
Vce(on) (Max) @ Vge, Ic |
4.2V @ 15V, 10A |
Turn Off Time-Nom (toff) |
637 ns |
Turn On Delay Time |
39 ns |
Transistor Application |
MOTOR CONTROL |
Td (on/off) @ 25°C |
39ns/220ns |
Switching Energy |
950μJ (on), 1.15mJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
6V |
Fall Time-Max (tf) |
140ns |
Height |
20.7mm |
Length |
15.87mm |
Width |
5.3086mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
In stock
Manufacturer |
Infineon Technologies |
---|---|
Case Connection |
COLLECTOR |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
1.2kV |
Number of Elements |
1 |
Test Conditions |
960V, 24A, 5 Ω, 15V |
Turn Off Delay Time |
200 ns |
Operating Temperature |
-55°C~150°C TJ |
Published |
2000 |
Part Status |
Last Time Buy |
Packaging |
Tube |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Termination |
Through Hole |
ECCN Code |
EAR99 |
Additional Feature |
LOW CONDUCTION LOSS |
Voltage - Rated DC |
1.2kV |
Max Power Dissipation |
200W |
Current Rating |
45A |
Element Configuration |
Single |
Power Dissipation |
200W |
Mount |
Through Hole |
Factory Lead Time |
14 Weeks |
Current - Collector Pulsed (Icm) |
180A |
Td (on/off) @ 25°C |
35ns/200ns |
Rise Time |
15ns |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
3.7V |
Max Collector Current |
45A |
JEDEC-95 Code |
TO-247AC |
Voltage - Collector Emitter Breakdown (Max) |
1200V |
Turn On Time |
49 ns |
Vce(on) (Max) @ Vge, Ic |
3.7V @ 15V, 24A |
Turn Off Time-Nom (toff) |
600 ns |
Gate Charge |
160nC |
Turn On Delay Time |
35 ns |
Input Type |
Standard |
Switching Energy |
530μJ (on), 1.41mJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
6V |
Fall Time-Max (tf) |
500ns |
Height |
20.3mm |
Length |
15.875mm |
Width |
5.3mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Transistor Application |
POWER CONTROL |
Lead Free |
Lead Free |
In stock
Manufacturer |
Infineon Technologies |
---|---|
JESD-30 Code |
R-PSSO-G2 |
Mounting Type |
Surface Mount |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
480V, 8A, 100 Ω, 15V |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tube |
Published |
2004 |
JESD-609 Code |
e3 |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
2 |
Part Status |
Obsolete |
Termination |
SMD/SMT |
ECCN Code |
EAR99 |
Terminal Finish |
MATTE TIN OVER NICKEL |
Additional Feature |
LOW CONDUCTION LOSS |
Voltage - Rated DC |
600V |
Max Power Dissipation |
38W |
Terminal Form |
GULL WING |
Peak Reflow Temperature (Cel) |
260 |
Current Rating |
14A |
Time@Peak Reflow Temperature-Max (s) |
30 |
Base Part Number |
IRG4RC10SDPBF |
Mount |
Surface Mount |
Factory Lead Time |
8 Weeks |
Gate Charge |
15nC |
Current - Collector Pulsed (Icm) |
18A |
Input Type |
Standard |
Transistor Application |
POWER CONTROL |
Rise Time |
31ns |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
1.8V |
Max Collector Current |
14A |
Reverse Recovery Time |
28 ns |
JEDEC-95 Code |
TO-252AA |
Turn On Time |
106 ns |
Vce(on) (Max) @ Vge, Ic |
1.8V @ 15V, 8A |
Turn Off Time-Nom (toff) |
1780 ns |
Power Dissipation |
38W |
Element Configuration |
Single |
Td (on/off) @ 25°C |
76ns/815ns |
Switching Energy |
310μJ (on), 3.28mJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
6V |
Fall Time-Max (tf) |
1080ns |
Height |
1.2446mm |
Length |
6.7056mm |
Width |
6.22mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
RoHS Compliant |
Case Connection |
COLLECTOR |
Lead Free |
Lead Free |
In stock
Manufacturer |
Infineon Technologies |
---|---|
Published |
2000 |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
390V, 22A, 3.3 Ω, 15V |
Turn Off Delay Time |
110 ns |
Operating Temperature |
-55°C~150°C TJ |
Case Connection |
COLLECTOR |
Factory Lead Time |
14 Weeks |
Part Status |
Last Time Buy |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Termination |
Through Hole |
ECCN Code |
EAR99 |
Voltage - Rated DC |
600V |
Max Power Dissipation |
308W |
Current Rating |
60A |
Element Configuration |
Single |
Power Dissipation |
308W |
Packaging |
Bulk |
Input Type |
Standard |
Gate Charge |
160nC |
Current - Collector Pulsed (Icm) |
120A |
Rise Time |
6ns |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
2.55V |
Max Collector Current |
60A |
Reverse Recovery Time |
42 ns |
JEDEC-95 Code |
TO-247AC |
Turn On Time |
34 ns |
Vce(on) (Max) @ Vge, Ic |
2.55V @ 15V, 35A |
Turn Off Time-Nom (toff) |
142 ns |
IGBT Type |
NPT |
Turn On Delay Time |
26 ns |
Transistor Application |
POWER CONTROL |
Td (on/off) @ 25°C |
26ns/110ns |
Switching Energy |
220μJ (on), 215μJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
5V |
Height |
20.7mm |
Length |
15.87mm |
Width |
5.3086mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
In stock
Manufacturer |
ON Semiconductor |
---|---|
Operating Temperature |
-55°C~150°C TJ |
Contact Plating |
Tin |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-264-3, TO-264AA |
Number of Pins |
3 |
Weight |
6.756g |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
1.2kV |
Number of Elements |
1 |
Test Conditions |
600V, 40A, 5 Ω, 15V |
Current Rating |
64A |
Factory Lead Time |
4 Weeks |
Packaging |
Tube |
Published |
2008 |
JESD-609 Code |
e3 |
Pbfree Code |
yes |
Part Status |
Not For New Designs |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
HTS Code |
8541.29.00.95 |
Voltage - Rated DC |
1.2kV |
Max Power Dissipation |
500W |
Turn Off Delay Time |
110 ns |
Element Configuration |
Single |
Max Junction Temperature (Tj) |
150°C |
Continuous Collector Current |
64A |
Turn On Delay Time |
15 ns |
Transistor Application |
POWER CONTROL |
Rise Time |
20ns |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
1.2kV |
Max Collector Current |
64A |
Reverse Recovery Time |
112 ns |
Voltage - Collector Emitter Breakdown (Max) |
1200V |
Turn On Time |
45 ns |
Vce(on) (Max) @ Vge, Ic |
3.2V @ 15V, 40A |
Power Dissipation |
500W |
Input Type |
Standard |
Turn Off Time-Nom (toff) |
165 ns |
IGBT Type |
NPT |
Gate Charge |
220nC |
Current - Collector Pulsed (Icm) |
160A |
Td (on/off) @ 25°C |
15ns/110ns |
Switching Energy |
2.3mJ (on), 1.1mJ (off) |
Height |
29mm |
Length |
20mm |
Width |
5mm |
Radiation Hardening |
No |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
In stock
Manufacturer |
ON Semiconductor |
---|---|
Published |
2011 |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Number of Pins |
3 |
Weight |
6.39g |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
390V, 20A, 3 Ω, 15V |
Turn Off Delay Time |
73 ns |
Operating Temperature |
-55°C~150°C TJ |
Current Rating |
70A |
Packaging |
Tube |
JESD-609 Code |
e3 |
Pbfree Code |
yes |
Part Status |
Not For New Designs |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Terminal Finish |
Tin (Sn) |
Additional Feature |
LOW CONDUCTION LOSS |
HTS Code |
8541.29.00.95 |
Voltage - Rated DC |
600V |
Max Power Dissipation |
290W |
Mount |
Through Hole |
Factory Lead Time |
4 Weeks |
Turn On Time |
28 ns |
Element Configuration |
Single |
Case Connection |
COLLECTOR |
Input Type |
Standard |
Turn On Delay Time |
15 ns |
Transistor Application |
POWER CONTROL |
Rise Time |
12ns |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
600V |
Max Collector Current |
70A |
Reverse Recovery Time |
35 ns |
Max Breakdown Voltage |
600V |
Vce(on) (Max) @ Vge, Ic |
2.7V @ 15V, 20A |
Turn Off Time-Nom (toff) |
160 ns |
Base Part Number |
HGTG20N60 |
Gate Charge |
142nC |
Current - Collector Pulsed (Icm) |
280A |
Td (on/off) @ 25°C |
15ns/73ns |
Switching Energy |
105μJ (on), 150μJ (off) |
Height |
20.82mm |
Length |
15.87mm |
Width |
4.82mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Power Dissipation |
290W |
Lead Free |
Lead Free |
In stock
Manufacturer |
ON Semiconductor |
---|---|
Packaging |
Tube |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Number of Pins |
3 |
Weight |
6.39g |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
1.2kV |
Number of Elements |
1 |
Test Conditions |
960V, 27A, 3 Ω, 15V |
Turn Off Delay Time |
240 ns |
Current Rating |
72A |
Factory Lead Time |
44 Weeks |
JESD-609 Code |
e3 |
Pbfree Code |
yes |
Part Status |
Not For New Designs |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Terminal Finish |
Tin (Sn) |
HTS Code |
8541.29.00.95 |
Voltage - Rated DC |
1.2kV |
Max Power Dissipation |
500W |
Operating Temperature |
-55°C~150°C TJ |
Element Configuration |
Single |
Turn Off Time-Nom (toff) |
360 ns |
IGBT Type |
NPT |
Input Type |
Standard |
Turn On Delay Time |
24 ns |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
1.2kV |
Max Collector Current |
72A |
Voltage - Collector Emitter Breakdown (Max) |
1200V |
Turn On Time |
42 ns |
Vce(on) (Max) @ Vge, Ic |
2.7V @ 15V, 27A |
Continuous Collector Current |
72A |
Power Dissipation |
500W |
Case Connection |
COLLECTOR |
Gate Charge |
270nC |
Current - Collector Pulsed (Icm) |
216A |
Td (on/off) @ 25°C |
24ns/195ns |
Switching Energy |
2.2mJ (on), 2.3mJ (off) |
Height |
20.82mm |
Length |
15.87mm |
Width |
4.82mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
In stock
Manufacturer |
ON Semiconductor |
---|---|
Operating Temperature |
-55°C~175°C TJ |
Terminal Finish |
Tin (Sn) |
Moisture Sensitivity Level (MSL) |
Not Applicable |
Part Status |
Active |
Pbfree Code |
yes |
JESD-609 Code |
e3 |
Published |
2013 |
Max Power Dissipation |
454W |
Packaging |
Tube |
Test Conditions |
600V, 40A, 10 Ω, 15V |
Collector-Emitter Breakdown Voltage |
1.2kV |
Number of Pins |
3 |
Package / Case |
TO-247-3 |
Mounting Type |
Through Hole |
Mount |
Through Hole |
Factory Lead Time |
20 Weeks |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Vce(on) (Max) @ Vge, Ic |
2.3V @ 15V, 40A |
RoHS Status |
ROHS3 Compliant |
REACH SVHC |
No SVHC |
Switching Energy |
1.6mJ (on), 1.1mJ (off) |
Td (on/off) @ 25°C |
18ns/145ns |
Gate Charge |
212nC |
IGBT Type |
Trench Field Stop |
Voltage - Collector Emitter Breakdown (Max) |
1200V |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Reverse Recovery Time |
136 ns |
Max Collector Current |
160A |
Collector Emitter Voltage (VCEO) |
2.3V |
Power - Max |
454W |
Input Type |
Standard |
Element Configuration |
Single |
Lead Free |
Lead Free |
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