Infineon Technologies IRG4PH50S-EPBF

SKU: IRG4PH50S-EPBF-9

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Manufacturer Part :
IRG4PH50S-EPBF
Manufacturer :
Infineon Technologies
Package :
TO-247-3
RoHS :
RoHS Compliant
IRG4PH50S-EPBF Datasheet :

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Description

Specification

Processor

Manufacturer

Infineon Technologies

Packaging

Tube

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

1.2kV

Number of Elements

1

Test Conditions

960V, 33A, 5 Ω, 15V

Power Dissipation

200W

Factory Lead Time

14 Weeks

Published

2000

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Max Power Dissipation

200W

Terminal Position

SINGLE

Element Configuration

Dual

Operating Temperature

-55°C~150°C TJ

Case Connection

COLLECTOR

Gate Charge

167nC

Current - Collector Pulsed (Icm)

114A

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

1.7V

Max Collector Current

57A

JEDEC-95 Code

TO-247AD

Voltage - Collector Emitter Breakdown (Max)

1200V

Turn On Time

62 ns

Vce(on) (Max) @ Vge, Ic

1.7V @ 15V, 33A

Turn Off Time-Nom (toff)

2170 ns

Input Type

Standard

Transistor Application

POWER CONTROL

Td (on/off) @ 25°C

32ns/845ns

Switching Energy

1.8mJ (on), 19.6mJ (off)

Height

20.7mm

Length

15.87mm

Width

5.3086mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

RoHS Compliant

Lead Free

Lead Free

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