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Manufacturer |
Infineon Technologies |
---|---|
Voltage - Rated DC |
250V |
Package / Case |
TO-247-3 |
Number of Pins |
3 |
Supplier Device Package |
TO-247AC |
Collector-Emitter Breakdown Voltage |
250V |
Current-Collector (Ic) (Max) |
98A |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Bulk |
Test Conditions |
200V, 55A, 5Ohm, 15V |
Published |
2004 |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Termination |
Through Hole |
Max Operating Temperature |
150°C |
Min Operating Temperature |
-55°C |
Mounting Type |
Through Hole |
Mount |
Through Hole |
Voltage - Collector Emitter Breakdown (Max) |
250V |
Vce(on) (Max) @ Vge, Ic |
1.5V @ 15V, 55A |
Power Dissipation |
200W |
Input Type |
Standard |
Power - Max |
200W |
Rise Time |
44ns |
Collector Emitter Voltage (VCEO) |
1.5V |
Max Collector Current |
98A |
Current Rating |
98A |
Max Power Dissipation |
200W |
Gate Charge |
200nC |
Current - Collector Pulsed (Icm) |
196A |
Td (on/off) @ 25°C |
40ns/270ns |
Switching Energy |
380μJ (on), 3.5mJ (off) |
REACH SVHC |
No SVHC |
RoHS Status |
RoHS Compliant |
Element Configuration |
Single |
Lead Free |
Lead Free |
In stock
Manufacturer |
Infineon Technologies |
---|---|
Published |
1998 |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
480V, 20A, 10 Ω, 15V |
Turn Off Delay Time |
110 ns |
Operating Temperature |
-55°C~150°C TJ |
Input Type |
Standard |
Factory Lead Time |
14 Weeks |
Part Status |
Last Time Buy |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Termination |
Through Hole |
ECCN Code |
EAR99 |
Voltage - Rated DC |
600V |
Max Power Dissipation |
160W |
Current Rating |
40A |
Element Configuration |
Single |
Power Dissipation |
160W |
Case Connection |
COLLECTOR |
Packaging |
Bulk |
Turn On Delay Time |
54 ns |
Gate Charge |
100nC |
Current - Collector Pulsed (Icm) |
160A |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
600V |
Max Collector Current |
40A |
Reverse Recovery Time |
42 ns |
JEDEC-95 Code |
TO-247AC |
Turn On Time |
92 ns |
Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 20A |
Max Junction Temperature (Tj) |
150°C |
Continuous Collector Current |
40A |
Turn Off Time-Nom (toff) |
330 ns |
Transistor Application |
POWER CONTROL |
Rise Time |
57ns |
Td (on/off) @ 25°C |
54ns/110ns |
Switching Energy |
710μJ (on), 350μJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
6V |
Fall Time-Max (tf) |
120ns |
Height |
24.6mm |
Length |
15.875mm |
Width |
5.3mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
In stock
Manufacturer |
Infineon Technologies |
---|---|
Element Configuration |
Dual |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
480V, 41A, 5 Ω, 15V |
Turn Off Delay Time |
650 ns |
Operating Temperature |
-55°C~150°C TJ |
Published |
2000 |
JESD-609 Code |
e3 |
Packaging |
Bulk |
Part Status |
Last Time Buy |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Voltage - Rated DC |
600V |
Max Power Dissipation |
200W |
Terminal Position |
SINGLE |
Peak Reflow Temperature (Cel) |
250 |
Current Rating |
70A |
Time@Peak Reflow Temperature-Max (s) |
30 |
Mount |
Through Hole |
Factory Lead Time |
14 Weeks |
Current - Collector Pulsed (Icm) |
140A |
Td (on/off) @ 25°C |
33ns/650ns |
Turn On Delay Time |
33 ns |
Rise Time |
30ns |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
1.36V |
Max Collector Current |
70A |
JEDEC-95 Code |
TO-247AC |
Turn On Time |
62 ns |
Vce(on) (Max) @ Vge, Ic |
1.36V @ 15V, 41A |
Turn Off Time-Nom (toff) |
1700 ns |
Gate Charge |
180nC |
Case Connection |
COLLECTOR |
Power Dissipation |
200W |
Switching Energy |
720μJ (on), 8.27mJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
6V |
Fall Time-Max (tf) |
600ns |
Height |
20.2946mm |
Length |
15.875mm |
Width |
5.3mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Input Type |
Standard |
Lead Free |
Lead Free |
In stock
Manufacturer |
Infineon Technologies |
---|---|
Packaging |
Bulk |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Number of Pins |
3 |
Weight |
38.000013g |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
480V, 27A, 5 Ω, 15V |
Turn Off Delay Time |
120 ns |
Element Configuration |
Dual |
Factory Lead Time |
14 Weeks |
Published |
2000 |
Part Status |
Last Time Buy |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Termination |
Through Hole |
ECCN Code |
EAR99 |
Additional Feature |
LOW CONDUCTION LOSS |
Voltage - Rated DC |
600V |
Max Power Dissipation |
200W |
Terminal Position |
SINGLE |
Current Rating |
55A |
Operating Temperature |
-55°C~150°C TJ |
Power Dissipation |
200W |
Gate Charge |
180nC |
Current - Collector Pulsed (Icm) |
220A |
Turn On Delay Time |
46 ns |
Transistor Application |
POWER CONTROL |
Rise Time |
33ns |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
2.3V |
Max Collector Current |
55A |
JEDEC-95 Code |
TO-247AC |
Turn On Time |
74 ns |
Vce(on) (Max) @ Vge, Ic |
2.3V @ 15V, 27A |
Turn Off Time-Nom (toff) |
272 ns |
Case Connection |
COLLECTOR |
Input Type |
Standard |
Td (on/off) @ 25°C |
46ns/120ns |
Switching Energy |
80μJ (on), 320μJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
6V |
Fall Time-Max (tf) |
86ns |
Height |
20.2946mm |
Length |
15.875mm |
Width |
5.3mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
In stock
Manufacturer |
Infineon Technologies |
---|---|
Case Connection |
COLLECTOR |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
1.2kV |
Number of Elements |
1 |
Test Conditions |
960V, 24A, 5 Ω, 15V |
Turn Off Delay Time |
200 ns |
Operating Temperature |
-55°C~150°C TJ |
Published |
2000 |
Part Status |
Last Time Buy |
Packaging |
Tube |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Termination |
Through Hole |
ECCN Code |
EAR99 |
Additional Feature |
LOW CONDUCTION LOSS |
Voltage - Rated DC |
1.2kV |
Max Power Dissipation |
200W |
Current Rating |
45A |
Element Configuration |
Single |
Power Dissipation |
200W |
Mount |
Through Hole |
Factory Lead Time |
14 Weeks |
Current - Collector Pulsed (Icm) |
180A |
Td (on/off) @ 25°C |
35ns/200ns |
Rise Time |
15ns |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
3.7V |
Max Collector Current |
45A |
JEDEC-95 Code |
TO-247AC |
Voltage - Collector Emitter Breakdown (Max) |
1200V |
Turn On Time |
49 ns |
Vce(on) (Max) @ Vge, Ic |
3.7V @ 15V, 24A |
Turn Off Time-Nom (toff) |
600 ns |
Gate Charge |
160nC |
Turn On Delay Time |
35 ns |
Input Type |
Standard |
Switching Energy |
530μJ (on), 1.41mJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
6V |
Fall Time-Max (tf) |
500ns |
Height |
20.3mm |
Length |
15.875mm |
Width |
5.3mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Transistor Application |
POWER CONTROL |
Lead Free |
Lead Free |
In stock
Manufacturer |
Infineon Technologies |
---|---|
Packaging |
Tube |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-274AA |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
480V, 60A, 5 Ω, 15V |
Turn Off Delay Time |
245 ns |
Power Dissipation |
350W |
Factory Lead Time |
13 Weeks |
Published |
1999 |
Part Status |
Last Time Buy |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Termination |
Through Hole |
Additional Feature |
LOW CONDUCTION LOSS |
Voltage - Rated DC |
600V |
Max Power Dissipation |
350W |
Current Rating |
85A |
Element Configuration |
Single |
Operating Temperature |
-55°C~150°C TJ |
Case Connection |
COLLECTOR |
Continuous Collector Current |
85A |
Turn Off Time-Nom (toff) |
503 ns |
Transistor Application |
POWER CONTROL |
Rise Time |
94ns |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
600V |
Max Collector Current |
85A |
Reverse Recovery Time |
82 ns |
Turn On Time |
179 ns |
Vce(on) (Max) @ Vge, Ic |
2V @ 15V, 60A |
Max Junction Temperature (Tj) |
150°C |
Input Type |
Standard |
Turn On Delay Time |
90 ns |
Gate Charge |
340nC |
Current - Collector Pulsed (Icm) |
200A |
Td (on/off) @ 25°C |
90ns/245ns |
Switching Energy |
3.26mJ (on), 2.27mJ (off) |
Height |
24.8mm |
Length |
16.1mm |
Width |
5.3mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
In stock
Manufacturer |
Infineon Technologies |
---|---|
JESD-30 Code |
R-PSSO-G2 |
Mounting Type |
Surface Mount |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
480V, 8A, 100 Ω, 15V |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tube |
Published |
2004 |
JESD-609 Code |
e3 |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
2 |
Part Status |
Obsolete |
Termination |
SMD/SMT |
ECCN Code |
EAR99 |
Terminal Finish |
MATTE TIN OVER NICKEL |
Additional Feature |
LOW CONDUCTION LOSS |
Voltage - Rated DC |
600V |
Max Power Dissipation |
38W |
Terminal Form |
GULL WING |
Peak Reflow Temperature (Cel) |
260 |
Current Rating |
14A |
Time@Peak Reflow Temperature-Max (s) |
30 |
Base Part Number |
IRG4RC10SDPBF |
Mount |
Surface Mount |
Factory Lead Time |
8 Weeks |
Gate Charge |
15nC |
Current - Collector Pulsed (Icm) |
18A |
Input Type |
Standard |
Transistor Application |
POWER CONTROL |
Rise Time |
31ns |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
1.8V |
Max Collector Current |
14A |
Reverse Recovery Time |
28 ns |
JEDEC-95 Code |
TO-252AA |
Turn On Time |
106 ns |
Vce(on) (Max) @ Vge, Ic |
1.8V @ 15V, 8A |
Turn Off Time-Nom (toff) |
1780 ns |
Power Dissipation |
38W |
Element Configuration |
Single |
Td (on/off) @ 25°C |
76ns/815ns |
Switching Energy |
310μJ (on), 3.28mJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
6V |
Fall Time-Max (tf) |
1080ns |
Height |
1.2446mm |
Length |
6.7056mm |
Width |
6.22mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
RoHS Compliant |
Case Connection |
COLLECTOR |
Lead Free |
Lead Free |
In stock
Manufacturer |
Infineon Technologies |
---|---|
Published |
2006 |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Number of Pins |
3 |
Weight |
38.000013g |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
400V, 48A, 10 Ω, 15V |
Turn Off Delay Time |
145 ns |
Operating Temperature |
-55°C~175°C TJ |
Input Type |
Standard |
Factory Lead Time |
26 Weeks |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Voltage - Rated DC |
300V |
Max Power Dissipation |
330W |
Current Rating |
96A |
Base Part Number |
IRGP4063D |
Element Configuration |
Single |
Power Dissipation |
330W |
Case Connection |
COLLECTOR |
Packaging |
Tube |
Turn On Delay Time |
60 ns |
Gate Charge |
95nC |
Current - Collector Pulsed (Icm) |
144A |
Drain to Source Voltage (Vdss) |
300V |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
2.14V |
Max Collector Current |
96A |
Reverse Recovery Time |
115 ns |
Continuous Drain Current (ID) |
96A |
JEDEC-95 Code |
TO-247AC |
Turn On Time |
100 ns |
Vce(on) (Max) @ Vge, Ic |
2.14V @ 15V, 48A |
Turn Off Time-Nom (toff) |
210 ns |
IGBT Type |
Trench |
Transistor Application |
POWER CONTROL |
Rise Time |
56ns |
Td (on/off) @ 25°C |
60ns/145ns |
Switching Energy |
625μJ (on), 1.28mJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
6.5V |
Fall Time-Max (tf) |
46ns |
Height |
20.3mm |
Length |
15.875mm |
Width |
5.3mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
In stock
Manufacturer |
Infineon Technologies |
---|---|
Packaging |
Tube |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Number of Pins |
3 |
Weight |
38.000013g |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
390V, 33A, 3.3 Ω, 15V |
Turn Off Delay Time |
130 ns |
Case Connection |
COLLECTOR |
Factory Lead Time |
14 Weeks |
Published |
2004 |
Part Status |
Last Time Buy |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Termination |
Through Hole |
ECCN Code |
EAR99 |
Voltage - Rated DC |
600V |
Max Power Dissipation |
390W |
Current Rating |
75A |
Element Configuration |
Single |
Power Dissipation |
390W |
Operating Temperature |
-55°C~150°C TJ |
Input Type |
Standard |
Gate Charge |
205nC |
Current - Collector Pulsed (Icm) |
150A |
Rise Time |
10ns |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
2.85V |
Max Collector Current |
75A |
Reverse Recovery Time |
42 ns |
JEDEC-95 Code |
TO-247AC |
Turn On Time |
39 ns |
Vce(on) (Max) @ Vge, Ic |
2.85V @ 15V, 50A |
Turn Off Time-Nom (toff) |
161 ns |
IGBT Type |
NPT |
Turn On Delay Time |
30 ns |
Transistor Application |
POWER CONTROL |
Td (on/off) @ 25°C |
30ns/130ns |
Switching Energy |
255μJ (on), 375μJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
5V |
Fall Time-Max (tf) |
20ns |
Height |
20.7mm |
Length |
15.87mm |
Width |
5.3086mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
In stock
Manufacturer |
Infineon Technologies |
---|---|
Packaging |
Bulk |
Contact Plating |
Tin |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Number of Pins |
3 |
Weight |
38.000013g |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
390V, 33A, 3.3 Ω, 15V |
Turn Off Delay Time |
140 ns |
Input Type |
Standard |
Factory Lead Time |
14 Weeks |
Published |
2004 |
Part Status |
Last Time Buy |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Voltage - Rated DC |
600V |
Max Power Dissipation |
370W |
Current Rating |
75A |
Element Configuration |
Single |
Power Dissipation |
370W |
Case Connection |
COLLECTOR |
Operating Temperature |
-55°C~150°C TJ |
Turn On Delay Time |
33 ns |
Gate Charge |
240nC |
Current - Collector Pulsed (Icm) |
150A |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
600V |
Max Collector Current |
75A |
Reverse Recovery Time |
50 ns |
JEDEC-95 Code |
TO-247AC |
Turn On Time |
59 ns |
Vce(on) (Max) @ Vge, Ic |
2.6V @ 15V, 50A |
Max Junction Temperature (Tj) |
150°C |
Continuous Collector Current |
75A |
Turn Off Time-Nom (toff) |
190 ns |
IGBT Type |
NPT |
Transistor Application |
POWER CONTROL |
Rise Time |
26ns |
Td (on/off) @ 25°C |
34ns/130ns |
Switching Energy |
360μJ (on), 380μJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
5V |
Fall Time-Max (tf) |
65ns |
Height |
24.99mm |
Length |
15.87mm |
Width |
5.3086mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
In stock
Manufacturer |
ON Semiconductor |
---|---|
Operating Temperature |
-55°C~150°C TJ |
Contact Plating |
Tin |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-264-3, TO-264AA |
Number of Pins |
3 |
Weight |
6.756g |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
1.2kV |
Number of Elements |
1 |
Test Conditions |
600V, 40A, 5 Ω, 15V |
Current Rating |
64A |
Factory Lead Time |
4 Weeks |
Packaging |
Tube |
Published |
2008 |
JESD-609 Code |
e3 |
Pbfree Code |
yes |
Part Status |
Not For New Designs |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
HTS Code |
8541.29.00.95 |
Voltage - Rated DC |
1.2kV |
Max Power Dissipation |
500W |
Turn Off Delay Time |
110 ns |
Element Configuration |
Single |
Max Junction Temperature (Tj) |
150°C |
Continuous Collector Current |
64A |
Turn On Delay Time |
15 ns |
Transistor Application |
POWER CONTROL |
Rise Time |
20ns |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
1.2kV |
Max Collector Current |
64A |
Reverse Recovery Time |
112 ns |
Voltage - Collector Emitter Breakdown (Max) |
1200V |
Turn On Time |
45 ns |
Vce(on) (Max) @ Vge, Ic |
3.2V @ 15V, 40A |
Power Dissipation |
500W |
Input Type |
Standard |
Turn Off Time-Nom (toff) |
165 ns |
IGBT Type |
NPT |
Gate Charge |
220nC |
Current - Collector Pulsed (Icm) |
160A |
Td (on/off) @ 25°C |
15ns/110ns |
Switching Energy |
2.3mJ (on), 1.1mJ (off) |
Height |
29mm |
Length |
20mm |
Width |
5mm |
Radiation Hardening |
No |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
In stock
Manufacturer |
ON Semiconductor |
---|---|
Published |
2011 |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Number of Pins |
3 |
Weight |
6.39g |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
390V, 20A, 3 Ω, 15V |
Turn Off Delay Time |
73 ns |
Operating Temperature |
-55°C~150°C TJ |
Current Rating |
70A |
Packaging |
Tube |
JESD-609 Code |
e3 |
Pbfree Code |
yes |
Part Status |
Not For New Designs |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Terminal Finish |
Tin (Sn) |
Additional Feature |
LOW CONDUCTION LOSS |
HTS Code |
8541.29.00.95 |
Voltage - Rated DC |
600V |
Max Power Dissipation |
290W |
Mount |
Through Hole |
Factory Lead Time |
4 Weeks |
Turn On Time |
28 ns |
Element Configuration |
Single |
Case Connection |
COLLECTOR |
Input Type |
Standard |
Turn On Delay Time |
15 ns |
Transistor Application |
POWER CONTROL |
Rise Time |
12ns |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
600V |
Max Collector Current |
70A |
Reverse Recovery Time |
35 ns |
Max Breakdown Voltage |
600V |
Vce(on) (Max) @ Vge, Ic |
2.7V @ 15V, 20A |
Turn Off Time-Nom (toff) |
160 ns |
Base Part Number |
HGTG20N60 |
Gate Charge |
142nC |
Current - Collector Pulsed (Icm) |
280A |
Td (on/off) @ 25°C |
15ns/73ns |
Switching Energy |
105μJ (on), 150μJ (off) |
Height |
20.82mm |
Length |
15.87mm |
Width |
4.82mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Power Dissipation |
290W |
Lead Free |
Lead Free |
In stock
Manufacturer |
STMicroelectronics |
---|---|
Series |
PowerMESH™ |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
390V, 20A, 10 Ω, 15V |
Turn Off Delay Time |
118 ns |
Operating Temperature |
-55°C~150°C TJ |
Element Configuration |
Single |
Factory Lead Time |
8 Weeks |
JESD-609 Code |
e3 |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Terminal Finish |
Tin (Sn) |
Voltage - Rated DC |
600V |
Max Power Dissipation |
200W |
Current Rating |
60A |
Base Part Number |
STGW30 |
Pin Count |
3 |
Packaging |
Tube |
Power Dissipation |
200W |
Turn Off Time-Nom (toff) |
189 ns |
Gate Charge |
102nC |
Turn On Delay Time |
29.5 ns |
Transistor Application |
POWER CONTROL |
Rise Time |
12ns |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
600V |
Max Collector Current |
60A |
Reverse Recovery Time |
40 ns |
JEDEC-95 Code |
TO-247AC |
Turn On Time |
42.5 ns |
Vce(on) (Max) @ Vge, Ic |
2.5V @ 15V, 20A |
Case Connection |
ISOLATED |
Input Type |
Standard |
Current - Collector Pulsed (Icm) |
150A |
Td (on/off) @ 25°C |
29.5ns/118ns |
Switching Energy |
305μJ (on), 181μJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
5.75V |
Height |
20.15mm |
Length |
15.75mm |
Width |
5.15mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
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