Infineon IGC11T120T6LX1SA3

SKU: IGC11T120T6LX1SA3-9

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Manufacturer Part :
IGC11T120T6LX1SA3
Manufacturer :
Infineon
Package :
-
RoHS :
IGC11T120T6LX1SA3 Datasheet :
IGC11T120T6LX1SA3

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2-3 Days

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  • Warranty 1 year
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Description

Specification

Processor

Manufacturer

Infineon Technologies AG

Maximum Gate Emitter Voltage (V)

±20

Number of Terminals

2

Transistor Element Material

SILICON

Automotive

No

ECCN (US)

EAR99

EU RoHS

Compliant

Maximum Collector-Emitter Voltage (V)

1200

Supplier Package

Die

Surface Mount

YES

Maximum Operating Temperature (°C)

175

Minimum Operating Temperature (°C)

-40

Package Length

3.48

Package Shape

RECTANGULAR

Package Width

3.19

PCB changed

3

PPAP

No

Maximum Gate Emitter Leakage Current (uA)

0.12

Typical Collector Emitter Saturation Voltage (V)

1.85

Pin Count

3

JESD-30 Code

R-XUUC-N2

Part Status

Unconfirmed

ECCN Code

EAR99

Terminal Position

UPPER

Terminal Form

NO LEAD

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Reach Compliance Code

compliant

Packaging

Wafer

Pbfree Code

No

Qualification Status

Not Qualified

Number of Elements

1

Configuration

Single

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Channel Type

N

Collector Current-Max (IC)

8 A

Collector-Emitter Voltage-Max

1200 V

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